Excellent thermoelectric performance is obtained over a broad temperature range from 300 K to 800 K by doping single crystals of SnSe. The average value of the figure of merit ZT, of more than 1.17, is measured from 300 K to 800 K along the crystallographic b-axis of 3 at% Na-doped SnSe, with the maximum ZT reaching a value of 2 at 800 K. The room temperature value of the power factor for the same sample and in the same direction is 2.8 mW mK⁻², which is an order of magnitude higher than that of the undoped crystal. Calculations show that Na doping lowers the Fermi level and increases the number of carrier pockets in SnSe, leading to a collaborative optimization of the Seebeck coefficient and the electrical conductivity. The resultant optimized carrier concentration and the increased number of carrier pockets near the Fermi level in Na-doped samples are believed to be the key factors behind the spectacular enhancement of the average ZT.

中文翻译：

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重掺杂p型SnSe单晶中 高ZT的宽温度平台†

通过掺杂SnSe单晶，可以在300 K至800 K的宽温度范围内获得出色的热电性能。沿着3个原子百分比的Na掺杂的SnSe的晶体学b轴从300 K到800 K测得的品质因数ZT的平均值大于1.17，最大ZT在800 K时达到2的值。 。同一样品在相同方向上的功率因数的室温值为2.8 mW mK ^-2，比未掺杂的晶体高一个数量级。计算表明，Na掺杂会降低费米能级并增加SnSe中的载流子腔数，从而导致Seebeck系数和电导率的协同优化。据信，在掺钠样品中，优化的载流子浓度和费米能级附近载流子袋的增加是平均ZT显着提高的关键因素。