An evaporation–solution sequentially deposited wide bandgap perovskite has been widely applied to fabricate efficient, commercial textured perovskite/silicon tandem solar cells. However, current works generally widen the bandgap by incorporating more bromine into organic salt solutions, which poses challenges for further broadening the bandgap of perovskite thin films and is also prone to inhomogeneous crystallization and component distribution. Here, a halogen anion pre-homogenizing (Pre-H) strategy is proposed by a pre-forming homogeneous inorganic halide precursor to narrow the nucleation rate disparity between the iodide and bromide components. This approach yields improved longitudinal crystallinity, enhanced compositional uniformity, and optimized bottom interfacial contact. In addition, augmenting the proportion of PbBr₂ in the precursor template enables bandgap expansion of the Pre-H perovskite up to 1.78 eV without phase segregation. Consequently, single-junction wide bandgap perovskite solar cells (1.68 eV) utilizing the Pre-H strategy achieve an impressive efficiency of 22.21%. The monolithic commercial textured perovskite/silicon tandem solar cell (1.05 cm²) attains an efficiency of up to 30.83%, featuring an open-circuit voltage (V_OC) of 1.945 V, the highest V_OC for perovskite/silicon tandem solar cells based on the sequential deposited perovskite to date. When scaled to 10.5 cm × 10.5 cm substrates, the encapsulated tandem device achieves a power conversion efficiency of 27.1% (certified as 26.6%, with an aperture area of 64.64 cm²).

中文翻译：

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用于商用纹理钙钛矿/硅叠层太阳能电池的顺序沉积宽带隙钙钛矿的卤素阴离子预均质化

蒸发-溶液顺序沉积的宽带隙钙钛矿已广泛用于制造高效的商用纹理钙钛矿/硅叠层太阳能电池。然而，目前的工作通常通过在有机盐溶液中掺入更多的溴来拓宽带隙，这为进一步拓宽钙钛矿薄膜的带隙带来了挑战，并且也容易出现不均匀的结晶和成分分布。在这里，通过预形成均相无机卤化物前驱体提出了一种卤素阴离子预均质化 （Pre-H） 策略，以缩小碘化物和溴化物组分之间的成核速率差异。这种方法提高了纵向结晶度，增强了成分均匀性，并优化了底部界面接触。此外，增加前驱体模板中 PbBr₂ 的比例使 Pre-H 钙钛矿的带隙膨胀至 1.78 eV，而不会发生相偏析。因此，采用 Pre-H 策略的单结宽带隙钙钛矿太阳能电池 （1.68 eV） 实现了令人印象深刻的 22.21% 效率。单片商用纹理钙钛矿/硅叠层太阳能电池 （1.05 cm²） 的效率高达 30.83%，开路电压 （V_OC） 为 1.945 V，这是迄今为止基于顺序沉积钙钛矿的钙钛矿/硅叠层太阳能电池的最高 V_OC。当缩放到 10.5 cm × 10.5 cm 基板时，封装串联器件实现了 27.1% 的功率转换效率（认证为 26.6%，孔径面积为 64.64 cm²）。