当前位置: X-MOL 学术Nature › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
High-speed and large-scale intrinsically stretchable integrated circuits
Nature ( IF 64.8 ) Pub Date : 2024-03-13 , DOI: 10.1038/s41586-024-07096-7
Donglai Zhong , Can Wu , Yuanwen Jiang , Yujia Yuan , Min-gu Kim , Yuya Nishio , Chien-Chung Shih , Weichen Wang , Jian-Cheng Lai , Xiaozhou Ji , Theodore Z. Gao , Yi-Xuan Wang , Chengyi Xu , Yu Zheng , Zhiao Yu , Huaxin Gong , Naoji Matsuhisa , Chuanzhen Zhao , Yusheng Lei , Deyu Liu , Song Zhang , Yuto Ochiai , Shuhan Liu , Shiyuan Wei , Jeffrey B.-H. Tok , Zhenan Bao

Intrinsically stretchable electronics with skin-like mechanical properties have been identified as a promising platform for emerging applications ranging from continuous physiological monitoring to real-time analysis of health conditions, to closed-loop delivery of autonomous medical treatment1,2,3,4,5,6,7. However, current technologies could only reach electrical performance at amorphous-silicon level (that is, charge-carrier mobility of about 1 cm2 V−1 s−1), low integration scale (for example, 54 transistors per circuit) and limited functionalities8,9,10,11. Here we report high-density, intrinsically stretchable transistors and integrated circuits with high driving ability, high operation speed and large-scale integration. They were enabled by a combination of innovations in materials, fabrication process design, device engineering and circuit design. Our intrinsically stretchable transistors exhibit an average field-effect mobility of more than 20 cm2 V−1 s−1 under 100% strain, a device density of 100,000 transistors per cm2, including interconnects and a high drive current of around 2 μA μm−1 at a supply voltage of 5 V. Notably, these achieved parameters are on par with state-of-the-art flexible transistors based on metal-oxide, carbon nanotube and polycrystalline silicon materials on plastic substrates12,13,14. Furthermore, we realize a large-scale integrated circuit with more than 1,000 transistors and a stage-switching frequency greater than 1 MHz, for the first time, to our knowledge, in intrinsically stretchable electronics. Moreover, we demonstrate a high-throughput braille recognition system that surpasses human skin sensing ability, enabled by an active-matrix tactile sensor array with a record-high density of 2,500 units per cm2, and a light-emitting diode display with a high refreshing speed of 60 Hz and excellent mechanical robustness. The above advancements in device performance have substantially enhanced the abilities of skin-like electronics.



中文翻译:

高速大规模本质可伸缩集成电路

具有类皮肤机械特性的本质可拉伸电子产品已被认为是新兴应用的一个有前途的平台,范围从连续生理监测到健康状况实时分析,再到闭环提供自主医疗1,2,3,4, 5,6,7。然而,目前的技术只能达到非晶硅级别的电性能(即载流子迁移率约为1 cm 2  V -1  s -1)、集成度低(例如每个电路54个晶体管)和功能有限8,9,10,11。在这里,我们报告了具有高驱动能力、高运算速度和大规模集成的高密度、本质上可拉伸的晶体管和集成电路。它们是通过材料、制造工艺设计、器件工程和电路设计方面的创新相结合而实现的。我们的本质可拉伸晶体管在 100% 应变下表现出超过 20 cm 2  V -1  s -1的平均场效应迁移率,每 cm 2 100,000 个晶体管的器件密度,包括互连和约 2 μA μm 的高驱动电流在5V电源电压下为-1 。值得注意的是,这些实现的参数与基于塑料基板12、13、14上的金属氧化物、碳纳米管和多晶硅材料的最先进的柔性晶体管相当。此外,据我们所知,我们首次在本质上可拉伸的电子器件中实现了具有 1,000 多个晶体管和大于 1 MHz 级开关频率的大规模集成电路。此外,我们还展示了超越人类皮肤感知能力的高通量盲文识别系统,该系统由创纪录高密度每厘米 2,500 个单位的有源矩阵触觉传感器阵列高发光二极管显示屏实现。 60 Hz 的刷新速度和出色的机械坚固性。上述设备性能的进步极大地增强了类皮肤电子产品的能力。

更新日期:2024-03-15
down
wechat
bug