Highly reconfigurable logic-in-memory (LIM) cells based on emerging HfO₂-doped ferroelectric (FE) memory with multiple polarization states have received extensive attention in overcoming the bottleneck of a von Neumann architecture with flexible and efficient computing ability. However, the variation of polarization states in device-to-device (D2D) and cycle-to-cycle (C2C) caused by partial polarization switching seriously plagues the large-scale integration of LIM based on multistate FE memory. Here, a highly reliable reconfigurable LIM with parallel computing capability is proposed based on an indium-gallium-zinc-oxide (IGZO)-modulated multistate antiferroelectric (AFE) nonvolatile memory (NVM) with complete switching of different polarization states. The nonvolatile multiple polarization states of the AFE NVM are realized by introducing the bidirectional transformation of a built-in electric field in the memory, which is modulated by the accumulation or depletion of IGZO insertion layers between the electrodes and the AFE layer. The improved variation of C2C and D2D benefited from a nonoverlapping multiple coercive electric field (E_c) distribution and step-by-step polarization switching in AFE memory. Based on the proposed multistate AFE NVM, 2 logical operations are executed in parallel and 16 Boolean logic functions are constructed, including the 14 Boolean logic functions realized by a single device in 2 steps and the other 2 Boolean logic function realized by two devices in 4 steps. In addition, a 1-bit binary full subtractor and full adder can be realized efficiently using the multistate AFE NVM in parallel by fewer devices and operation steps, indicating that the AFE NVM is promising for developing larger scale efficient LIM with high reliability.

中文翻译：

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通过双向内置电场调制多态 IGZO/AFE 非易失性存储器实现高度可靠的内存逻辑

_{基于新兴 HfO 2}的高度可重构内存逻辑 (LIM) 单元具有多极化状态的掺杂铁电（FE）存储器在克服具有灵活高效计算能力的冯诺依曼架构瓶颈方面受到广泛关注。然而，由部分偏振切换引起的器件到器件（D2D）和周期到周期（C2C）的偏振态变化严重困扰着基于多态FE存储器的LIM的大规模集成。在这里，基于具有完全切换不同极化状态的氧化铟镓锌 (IGZO) 调制多态反铁电 (AFE) 非易失性存储器 (NVM)，提出了一种具有并行计算能力的高度可靠的可重构 LIM。AFE NVM的非易失性多极化状态是通过在存储器中引入内置电场的双向转换来实现的，这是通过电极和 AFE 层之间的 IGZO 插入层的积累或耗尽来调制的。C2C 和 D2D 的改进变化得益于非重叠的多重矫顽电场（E _c ) AFE 存储器中的分布和逐步偏振切换。基于所提出的多态AFE NVM，并行执行2个逻辑运算，构建16个布尔逻辑函数，其中14个布尔逻辑函数由单个器件分2步实现，另外2个布尔逻辑函数由两个器件分4步实现脚步。此外，使用多态 AFE NVM 可以通过更少的器件和操作步骤高效地并行实现 1 位二进制全减法器和全加器，表明 AFE NVM 有望用于开发更大规模、高可靠性的高效 LIM。