In this work, monolithic three-dimensional complementary metal oxide semiconductor (CMOS) inverter array has been fabricated, based on large-scale n-MoS₂ and p-MoTe₂ grown by the chemical vapor deposition method. In the CMOS device, the n- and p-channel field-effect transistors (FETs) stack vertically and share the same gate electrode. High k HfO₂ is used as the gate dielectric. An Al₂O₃ seed layer is used to protect the MoS₂ from heavily n-doping in the later-on atomic layer deposition process. P-MoTe₂ FET is intentionally designed as the upper layer. Because p-doping of MoTe₂ results from oxygen and water in the air, this design can guarantee a higher hole density of MoTe₂. An HfO₂ capping layer is employed to further balance the transfer curves of n- and p-channel FETs and improve the performance of the inverter. The typical gain and power consumption of the CMOS devices are about 4.2 and 0.11 nW, respectively, at V_DD of 1 V. The statistical results show that the CMOS array is with high device yield (60%) and an average voltage gain value of about 3.6 at V_DD of 1 V. This work demonstrates the advantage of two-dimensional semi-conductive transition metal dichalcogenides in fabricating high-density integrated circuits.

中文翻译：

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具有基于 CVD 生长的 n-MoS2 和 p-MoTe2 的单片 3D 架构的高性能 CMOS 反相器阵列

在这项工作中，基于通过化学气相沉积法生长的大规模n-MoS ₂和p-MoTe _{2 ，制造了单片三维互补金属氧化物半导体（CMOS）反相器阵列。}在 CMOS 器件中，n 和 p 沟道场效应晶体管 (FET) 垂直堆叠并共享同一栅电极。高k HfO ₂用作栅极电介质。Al ₂ O ₃种子层用于保护MoS ₂免受后续原子层沉积工艺中的重n掺杂。P-MoTe ₂ FET 被有意设计为上层。_{由于 MoTe 2}的 p 型掺杂由于空气中的氧气和水分，这种设计可以保证更高的MoTe ₂孔密度。采用HfO ₂覆盖层进一步平衡 n 和 p 沟道 FET 的传输曲线并提高反相器的性能。CMOS 器件的典型增益和功耗分别约为 4.2 和 0.11 nW，V _DD为 1 V。统计结果表明，CMOS 阵列具有很高的器件良率（60%），平均电压增益值为在 1 V 的V _DD时约为 3.6 。这项工作证明了二维半导体过渡金属二硫化物在制造高密度集成电路中的优势。