The implementation of high-efficiency and high-resolution displays has been the focus of considerable research interest. Recently, micro light-emitting diodes (micro-LEDs), which are inorganic light-emitting diodes of size <100 µm², have emerged as a promising display technology owing to their superior features and advantages over other displays like liquid crystal displays and organic light-emitting diodes. Although many companies have introduced micro-LED displays since 2012, obstacles to mass production still exist. Three major challenges, i.e., low quantum efficiency, time-consuming transfer, and complex color conversion, have been overcome with technological breakthroughs to realize cost-effective micro-LED displays. In the review, methods for improving the degraded quantum efficiency of GaN-based micro-LEDs induced by the size effect are examined, including wet chemical treatment, passivation layer adoption, LED structure design, and growing LEDs in self-passivated structures. Novel transfer technologies, including pick-up transfer and self-assembly methods, for developing large-area micro-LED displays with high yield and reliability are discussed in depth. Quantum dots as color conversion materials for high color purity, and deposition methods such as electrohydrodynamic jet printing or contact printing on micro-LEDs are also addressed. This review presents current status and critical challenges of micro-LED technology and promising technical breakthroughs for commercialization of high-performance displays.

中文翻译：

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高性能 Micro-LED 显示器芯片制造、转移和颜色转换方面的技术突破

高效、高分辨率显示器的实现一直是人们广泛研究兴趣的焦点。^{近年来，微型发光二极管（micro-LED）是一种尺寸<100 µm 2}的无机发光二极管，由于其优于液晶显示器和有机显示器等其他显示器的优异特性和优势，已成为一种有前途的显示技术。发光二极管。尽管自2012年以来许多公司都推出了micro-LED显示器，但量产的障碍仍然存在。通过技术突破，克服了低量子效率、耗时的传输和复杂的颜色转换三大挑战，实现了高性价比的Micro-LED显示器。在这篇综述中，研究了改善氮化镓基微型 LED 因尺寸效应引起的量子效率下降的方法，包括湿法化学处理、钝化层的采用、LED 结构设计以及在自钝化结构中生长 LED。深入讨论了用于开发高良率和可靠性的大面积 Micro-LED 显示器的新颖转移技术，包括拾取转移和自组装方法。还讨论了量子点作为高色纯度的颜色转换材料，以及微型 LED 上的电流体动力喷射印刷或接触印刷等沉积方法。本综述介绍了 micro-LED 技术的现状和关键挑战，以及高性能显示器商业化的有前景的技术突破。