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Embedded metallic nanoparticles facilitate metastability of switchable metallic domains in Mott threshold switches
Nature Communications ( IF 16.6 ) Pub Date : 2022-08-10 , DOI: 10.1038/s41467-022-32081-x
Minguk Jo 1 , Ye-Won Seo 1 , Hyojin Yoon 1, 2 , Yeon-Seo Nam 1 , Si-Young Choi 1 , Byung Joon Choi 3 , Junwoo Son 1
Affiliation  

Mott threshold switching, which is observed in quantum materials featuring an electrically fired insulator-to-metal transition, calls for delicate control of the percolative dynamics of electrically switchable domains on a nanoscale. Here, we demonstrate that embedded metallic nanoparticles (NP) dramatically promote metastability of switchable metallic domains in single-crystal-like VO2 Mott switches. Using a model system of Pt-NP-VO2 single-crystal-like films, interestingly, the embedded Pt NPs provide 33.3 times longer ‘memory’ of previous threshold metallic conduction by serving as pre-formed ‘stepping-stones’ in the switchable VO2 matrix by consecutive electical pulse measurement; persistent memory of previous firing during the application of sub-threshold pulses was achieved on a six orders of magnitude longer timescale than the single-pulse recovery time of the insulating resistance in Pt-NP-VO2 Mott switches. This discovery offers a fundamental strategy to exploit the geometric evolution of switchable domains in electrically fired transition and potential applications for non-Boolean computing using quantum materials.



中文翻译:

嵌入的金属纳米粒子有助于莫特阈值开关中可切换金属域的亚稳态

莫特阈值切换是在具有电激发绝缘体到金属转变的量子材料中观察到的,它需要在纳米尺度上对电可切换域的渗透动力学进行精细控制。在这里,我们证明了嵌入的金属纳米粒子 (NP) 显着促进了单晶状 VO 2 Mott 开关中可切换金属域的亚稳定性。有趣的是,使用 Pt-NP-VO 2类单晶薄膜的模型系统,嵌入的 Pt NP 通过充当可切换开关中预先形成的“垫脚石”,提供了 33.3 倍的先前阈值金属传导的“记忆” VO 2通过连续电脉冲测量矩阵;与 Pt-NP-VO 2 Mott 开关中绝缘电阻的单脉冲恢复时间相比,在应用亚阈值脉冲期间实现了先前触发的持久记忆,时间尺度长了六个数量级。这一发现提供了一种基本策略,可以利用可切换域在电激发跃迁中的几何演化以及使用量子材料进行非布尔计算的潜在应用。

更新日期:2022-08-10
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