Large-Area Hexagonal Boron Nitride Layers by Chemical Vapor Deposition: Growth and Applications for Substrates, Encapsulation, and Membranes,Accounts of Materials Research

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Large-Area Hexagonal Boron Nitride Layers by Chemical Vapor Deposition: Growth and Applications for Substrates, Encapsulation, and Membranes
Accounts of Materials Research ( IF 14.0 ) Pub Date : 2022-06-18 , DOI: 10.1021/accountsmr.2c00061
Kyung Yeol Ma ₁ , Minsu Kim ₁ , Hyeon Suk Shin _{1,

2}

Affiliation

Hexagonal boron nitride (hBN) has emerged as a promising two-dimensional (2D) material because of its unique optical properties in the deep-UV region, mechanical robustness, thermal stability, and chemical inertness. Ultrathin hBN layers have gained significant scientific attention for various applications, including nanoelectronics, photonics, single photon emission, anticorrosion, and membranes. For example, the carrier mobility of graphene- and MoS₂-based transistors can be improved by using an hBN encapsulation layer, which protects graphene or MoS₂ from air and/or screens the charge trap site of a substrate. Moreover, deep-UV emitters and detectors have been developed on the basis of the large bandgap of hBN (∼6 eV), which exhibits a sharp absorption at approximately 200 nm. Additionally, oxidation of metal surfaces can be prevented by hBN encapsulation, and proton transport can be facilitated by hBN membranes with low gas permeability. Wafer-scale growth of hBN films is crucial to enable their industrial-scale applications. In this regard, chemical vapor deposition (CVD) is a promising method in which scalable high-quality films can be grown at reasonable cost. To date, considerable efforts have been made to develop continuous hBN thin films with high crystallinity, from those with large grains to single-crystal ones, and to realize thickness control of hBN films by CVD. However, the growth of wafer-scale high-crystallinity hBN films with precise thickness control has not been reported yet. The hBN growth is significantly affected by the substrate, in particular the type of metals, because the intrinsic solubilities of boron and nitrogen depend on the type of metal; moreover, control of the grain size and thickness of hBN is difficult. Although growth mechanisms for various substrates have been proposed using various control experiments, a precise growth mechanism has not yet been established through systematic studies. Thus, a deeper understanding of the CVD-based growth of hBN is critical.

中文翻译：

化学气相沉积大面积六方氮化硼层：基板、封装和膜的生长和应用

六方氮化硼 (hBN) 因其在深紫外区域的独特光学特性、机械鲁棒性、热稳定性和化学惰性而成为一种有前途的二维 (2D) 材料。超薄 hBN 层在各种应用中获得了重要的科学关注，包括纳米电子学、光子学、单光子发射、防腐和膜。例如，基于石墨烯和 MoS ₂的晶体管的载流子迁移率可以通过使用保护石墨烯或 MoS _{2的 hBN 封装层来提高}来自空气和/或屏蔽基板的电荷陷阱位点。此外，深紫外发射器和检测器是基于 hBN（~6 eV）的大带隙开发的，它在大约 200 nm 处表现出尖锐的吸收。此外，hBN 封装可以防止金属表面的氧化，并且具有低透气性的 hBN 膜可以促进质子传输。hBN薄膜的晶圆级生长对于实现其工业规模应用至关重要。在这方面，化学气相沉积 (CVD) 是一种很有前途的方法，其中可以以合理的成本生长可扩展的高质量薄膜。迄今为止，已经做出了相当大的努力来开发具有高结晶度的连续hBN薄膜，从大晶粒到单晶薄膜，并通过CVD实现hBN薄膜的厚度控制。然而，尚未报道具有精确厚度控制的晶圆级高结晶度 hBN 薄膜的生长。hBN 的生长受衬底的显着影响，特别是金属的类型，因为硼和氮的固有溶解度取决于金属的类型；此外，hBN的晶粒尺寸和厚度难以控制。尽管已经使用各种对照实验提出了各种底物的生长机制，但尚未通过系统研究建立精确的生长机制。因此，深入了解基于 CVD 的 hBN 生长至关重要。因为硼和氮的固有溶解度取决于金属的类型；此外，hBN的晶粒尺寸和厚度难以控制。尽管已经使用各种对照实验提出了各种底物的生长机制，但尚未通过系统研究建立精确的生长机制。因此，深入了解基于 CVD 的 hBN 生长至关重要。因为硼和氮的固有溶解度取决于金属的类型；此外，hBN的晶粒尺寸和厚度难以控制。尽管已经使用各种对照实验提出了各种底物的生长机制，但尚未通过系统研究建立精确的生长机制。因此，深入了解基于 CVD 的 hBN 生长至关重要。

更新日期：2022-06-18

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