In this letter, we report on the development of high-gain WR-1.5 amplifier circuits, utilizing a transferred-substrate InGaAs-on-insulator (InGaAs-OI) high-electron-mobility transistor (HEMT) technology on Si with 20-nm gate length. A six-stage and a nine-stage amplifier circuit are described, which are based on gain cells in cascode configuration. With more than 30 dB of measured gain in the frequency band of 660–700 GHz, the highest frequency of operation of transferred-substrate THz amplifiers is reported. These gain levels in excess of 30 dB, furthermore, correspond to the highest reported gain values and state-of-the-art performance around the targeted 670-GHz frequency band.

中文翻译：

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采用 InGaAs-on-Insulator HEMT 技术的高增益 670GHz 放大器电路

在这封信中，我们报告了高增益 WR-1.5 放大器电路的开发，该电路在 20-nm 的 Si 上利用转移衬底 InGaAs-on-insulator (InGaAs-OI) 高电子迁移率晶体管 (HEMT) 技术栅极长度。描述了六级和九级放大器电路，它们基于级联配置中的增益单元。据报道，在 660-700 GHz 频带中测量增益超过 30 dB，转移衬底 THz 放大器的最高工作频率被报道。此外，这些超过 30 dB 的增益水平对应于报告的最高增益值和目标 670-GHz 频带周围的最先进性能。