A compact high-speed active quench and reset (AQR) circuit integrated with a p + /n-well single-photon avalanche diode (SPAD) is designed and fabricated in a standard 65 nm CMOS technology. The post-layout simulations showed that the quenching time for this AQR circuit is only 0.1 ns, and the smallest dead time is 3.35 ns which corresponds a maximum count rate of ~300 Mcps. The measurements showed that the SPAD pixel achieved a dark count rate of 21 kHz, a peak photon detection probability of 23.8% at a 420 nm wavelength and a timing jitter of 139 ps (using a 405 nm pulsed laser) when the excess voltage was 0.5 V. Also, due to the short quenching time, negligible afterpulsing was observed during the measurements.

中文翻译：

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采用标准 65 nm CMOS 技术的 SPAD 高速有源猝灭和复位电路


采用标准 65 nm CMOS 技术设计和制造了集成有 ap + /n 阱单光子雪崩二极管 (SPAD) 的紧凑型高速有源淬灭和复位 (AQR) 电路。布局后仿真表明，该 AQR 电路的淬灭时间仅为 0.1 ns，最小死区时间为 3.35 ns，对应的最大计数率为 ~300 Mcps。测量结果表明，当过电压为 0.5 时，SPAD 像素实现了 21 kHz 的暗计数率、420 ​​nm 波长下 23.8% 的峰值光子检测概率以及 139 ps 的定时抖动（使用 405 nm 脉冲激光）。 V. 此外，由于淬火时间短，测量过程中观察到的后脉冲可以忽略不计。