A compact high-speed active quench and reset (AQR) circuit integrated with a p ⁺ /n-well single-photon avalanche diode (SPAD) is designed and fabricated in a standard 65 nm CMOS technology. The post-layout simulations showed that the quenching time for this AQR circuit is only 0.1 ns, and the smallest dead time is 3.35 ns which corresponds a maximum count rate of ~300 Mcps. The measurements showed that the SPAD pixel achieved a dark count rate of 21 kHz, a peak photon detection probability of 23.8% at a 420 nm wavelength and a timing jitter of 139 ps (using a 405 nm pulsed laser) when the excess voltage was 0.5 V. Also, due to the short quenching time, negligible afterpulsing was observed during the measurements.

中文翻译：

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采用标准 65 nm CMOS 技术的用于 SPAD 的高速有源淬火和复位电路

采用 标准 65 nm CMOS 技术设计和制造了一种集成了 ap ⁺ /n 阱单光子雪崩二极管 (SPAD)的紧凑型高速有源猝灭和复位 (AQR) 电路 。布局后模拟表明，该 AQR 电路的猝灭时间仅为 0.1 ns，最小死区时间为 3.35 ns，对应的最大计数率为 ~300 Mcps。测量结果表明，当过电压为 0.5 时，SPAD 像素实现了 21 kHz 的暗计数率，420 nm 波长下的峰值光子检测概率为 23.8%，时序抖动为 139 ps（使用 405 nm 脉冲激光器） V. 此外，由于淬火时间短，在测量过程中观察到的后脉冲可以忽略不计。