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Confined Fe Catalysts for High-Density SWNT Arrays Growth: a New Territory for Catalyst-Substrate Interaction Engineering
Small ( IF 13.3 ) Pub Date : 2021-09-23 , DOI: 10.1002/smll.202103433
Yue Hu 1 , Hongjie Zhang 1 , Shuchen Zhang 2 , Chao He 3 , Ying Wang 1 , Taibin Wang 1 , Ran Du 4 , Jinjie Qian 1 , Pan Li 5 , Jin Zhang 2
Affiliation  

Great efforts have been devoted to searching for efficient catalytic systems to produce ultra-high density single-walled carbon nanotube (SWNT) arrays, which lay the foundation for future electronic devices. However, one major obstacle for realizing high-density surface-aligned SWNT arrays is the poor stability of metal nanoparticles in chemical vapor deposition catalytic processes. Recently, Trojan catalyst has been reported to yield unprecedented high-density SWNT arrays with 130 SWNTs per µm on the a-plane (11-20) of the sapphire substrate. Herein, a concept of catalyst confinement effect is put forward to revealing the secret of remarkable growth efficiency of SWNT arrays by Trojan catalyst. Combined experimental and theoretical studies indicate that confinement of catalyst nanoparticles on discrete a-plane strips plays a key role in stabilizing the small nanoparticles. The highly dispersive and active states of catalysts are maintained, which promote the growth of super-dense SWNT arrays. By rationally designing the substrate reconstruction process, large areas of dense SWNT arrays (130 SWNTs per µm) covering the entire substrate are obtained. This approach may provide novel ideas for the synthesis of various high-density 1D nanomaterials.

中文翻译:

用于高密度 SWNT 阵列生长的受限 Fe 催化剂:催化剂-基材相互作用工程的新领域

人们一直致力于寻找高效的催化系统来生产超高密度单壁碳纳米管(SWNT)阵列,这为未来的电子设备奠定了基础。然而,实现高密度表面排列的单壁碳纳米管阵列的一个主要障碍是金属纳米粒子在化学气相沉积催化过程中的稳定性差。最近,据报道,特洛伊催化剂在蓝宝石基板的 a 面 (11-20) 上产生了前所未有的高密度 SWNT 阵列,每微米 130 个 SWNT。在此,提出了催化剂约束效应的概念,以揭示特洛伊催化剂对单壁碳纳米管阵列显着生长效率的秘密。结合实验和理论研究表明,将催化剂纳米颗粒限制在离散的 a 平面条带上在稳定小纳米颗粒方面起着关键作用。保持催化剂的高度分散和活性状态,促进了超致密单壁碳纳米管阵列的生长。通过合理设计衬底重建过程,获得覆盖整个衬底的大面积密集单壁碳纳米管阵列(每微米130个单壁碳纳米管)。这种方法可能为合成各种高密度一维纳米材料提供新的思路。获得了覆盖整个基板的大面积密集 SWNT 阵列(每微米 130 个 SWNT)。这种方法可能为合成各种高密度一维纳米材料提供新的思路。获得了覆盖整个基板的大面积密集 SWNT 阵列(每微米 130 个 SWNT)。这种方法可能为合成各种高密度一维纳米材料提供新的思路。
更新日期:2021-11-25
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