This paper discuss the structural, optical and electrical properties of aluminium doped tin oxide thin films prepared by sol-gel spin coating technique. The tetragonal rutile structure of SnO₂ was confirmed from the XRD measurements and having a preferential orientation along (1 1 0) plane. FESEM analysis reveals that the particles were uniformly distributed in the film and they are in the range of 10.15–39.58 nm. UV-Vis spectroscopy studies shows that the films were highly transparent and the band gap values are ranging from 3.30 to 3.57 eV. FTIR study reveals that the prepared films contain Sn–O–Sn, Sn–O, H–O–H, C–O and Sn–OH vibrations. Hall measurement analysis shows that the conductivity type was reversed from n-type to p-type at higher doping concentration of aluminium. The calculated values of mean free path were ranging from 0.6052 to 5.3732 A⁰. The Figure Of Merit (FOM) values were calculated and are ranging from 5.58 × 10⁻⁷ Ω⁻¹ to 1.74 × 10⁻⁵ Ω⁻¹.

本文讨论了溶胶-凝胶旋涂技术制备的铝掺杂氧化锡薄膜的结构、光学和电学性能。SnO ₂的四方金红石结构由 XRD 测量证实并具有沿 (1 1 0) 平面的优先取向。FESEM 分析表明颗粒均匀分布在薄膜中，它们的范围在 10.15-39.58 nm 之间。UV-Vis 光谱研究表明薄膜高度透明，带隙值范围为 3.30 至 3.57 eV。FTIR 研究表明，制备的薄膜含有 Sn-O-Sn、Sn-O、H-O-H、C-O 和 Sn-OH 振动。霍尔测量分析表明，在较高的铝掺杂浓度下，导电类型从 n 型反转为 p 型。平均自由程的计算值范围从 0.6052 到 5.3732 A ⁰。计算了品质因数 (FOM) 值，范围为 5.58 × 10 ^-7  Ω ^-1至 1.74 × 10 ^-5  Ω ^-1。