When the AlGaN/GaN HEMT is working for a long time under the high-power and high-temperature conditions, the internal heat will reduce its reliability. Here, the author first proposed a 2-D temperature distribution model to explain the mechanism of internal charge modulation to reduce the junction temperature of AlGaN / GaN HEMT. The etched AlGaN layer affects the channel 2DEG distribution and a new hot spot is generated in the thermal field, which effectively reduces the temperature and gets a more uniform temperature distribution. A quantitative analysis of the temperature model has been given to describe the effect of structure parameters on temperature optimization, and deeper etching depth is beneficial to reduce the junction temperature. The model is verified through simulation results and experimental tests, which prove its applicability. It is concluded that this model can effectively describe the temperature optimization of AlGaN/GaN HEMTs with the gate-edge etching technique.

当AlGaN / GaN HEMT在高功率和高温条件下长时间工作时，内部热量会降低其可靠性。在此，作者首先提出了二维温度分布模型，以解释内部电荷调制降低AlGaN / GaN HEMT结温的机理。刻蚀后的AlGaN层会影响沟道2DEG分布，并且在热场中会产生新的热点，从而有效降低温度并获得更均匀的温度分布。对温度模型进行了定量分析，以描述结构参数对温度优化的影响，而更深的蚀刻深度有利于降低结温。通过仿真结果和实验测试验证了该模型的适用性。