1,2,4-triazole (TAZ) has been proved to be an alternative to Benzotriazole (BTA) as an corrosion inhibitor in chemical mechanical polishing (CMP) of multilayer copper interconnection for integrated circuit. It has also become the main object to be removed in post CMP cleaning. In this paper, a new type of alkaline cleaning solution based on EDTA was proposed to remove TAZ on copper surface. The optimal concentration ratio and pH value of the alkaline cleaning solution were explored using electrochemical measurement, X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) and scanning electron microscopy (SEM). When the components of the cleaning solution were 25mg/L ethylenediaminetetraacetic acid (EDTA) and 600mg/L dodecylbenzene sulfonic acid (LABSA) (pH = 10.6), the Cu-1,2,4-trazole compounds formed by TAZ contamination on the copper surface can be effectively removed. Density Functional Theory (DFT) was used to confirm that EDTA could break the bond of Cu-1,2,4-triazole through the strong interaction between O16、H2、H36 and copper surface. No corrosion was observed on the cleaned copper surface and surface roughness was lower, which indicated that the cleaning solution was suitable for the removal of TAZ on copper surface.

1,2,4-三唑（TAZ）已被证明是苯并三唑（BTA）的替代品，用于集成电路多层铜互连的化学机械抛光（CMP）中的腐蚀抑制剂。它也已成为CMP后清洁中要去除的主要对象。本文提出了一种基于EDTA的新型碱性清洗液，用于去除铜表面的TAZ。使用电化学测量，X射线光电子能谱（XPS），原子力显微镜（AFM）和扫描电子显微镜（SEM）探索了碱性清洁溶液的最佳浓度比和pH值。当清洗液的成分为25 mg / L乙二胺四乙酸（EDTA）和600 mg / L十二烷基苯磺酸（LABSA）（pH = 10.6），可有效去除TAZ污染铜表面上形成的Cu-1,2,4-三唑化合物。密度泛函理论（DFT）证实EDTA可以通过O16，H2，H36与铜表面的强相互作用破坏Cu-1,2,4-三唑的键合。在清洁的铜表面上没有观察到腐蚀，并且表面粗糙度较低，这表明该清洁溶液适合于去除铜表面上的TAZ。