A 2D heterostructure consisting of few‐layer direct bandgap ReS₂, a thin h‐BN layer, and a monolayer graphene (Gr) for application to various electronic devices is investigated. Metal‐insulator‐semiconductor (MIS)‐type devices with 2D van‐der‐Waals (vdW) heterostructures are recently studied as important components to realize various multifunctional device applications in analogue and digital electronics. The tunnel diodes of ReS₂/h‐BN/Gr exhibit light tunable rectifying behaviors with low ideality factors and nearly temperature independent electrical characteristics. The devices behave like conventional MIS‐type tunnel diodes for logic gate applications. Furthermore, similar vertical heterostructures are shown to operate in field‐effect transistors with a low threshold voltage and a memory device with a large memory gate for future multifunctional device applications.

中文翻译：

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基于ReS2 / h-BN /石墨烯异质结构的多功能设备：隧道二极管，FET，逻辑门和存储器

研究了由几层直接带隙ReS ₂，薄h-BN层和单层石墨烯（Gr）组成的2D异质结构，可应用于各种电子设备。最近研究了具有二维范德华（vdW）异质结构的金属绝缘体（MIS）型器件，作为实现模拟和数字电子中各种多功能设备应用的重要组件。ReS ₂的隧道二极管/ h-BN / Gr表现出具有低理想因子和几乎与温度无关的电气特性的光可调整流行为。这些器件的行为类似于用于逻辑门应用的常规MIS型隧道二极管。此外，显示出类似的垂直异质结构可在具有低阈值电压的场效应晶体管和具有大存储栅极的存储器件中运行，以用于未来的多功能器件应用。