Graphene Nanoribbons: On-Surface Synthesis and Integration into Electronic Devices.,Advanced Materials

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Graphene Nanoribbons: On-Surface Synthesis and Integration into Electronic Devices.
Advanced Materials ( IF 27.4 ) Pub Date : 2020-09-18 , DOI: 10.1002/adma.202001893
Zongping Chen ₁ , Akimitsu Narita _{2,

3} , Klaus Müllen _{2,

4}

Affiliation

Graphene nanoribbons (GNRs) are quasi‐1D graphene strips, which have attracted attention as a novel class of semiconducting materials for various applications in electronics and optoelectronics. GNRs exhibit unique electronic and optical properties, which sensitively depend on their chemical structures, especially the width and edge configuration. Therefore, precision synthesis of GNRs with chemically defined structures is crucial for their fundamental studies as well as device applications. In contrast to top‐down methods, bottom‐up chemical synthesis using tailor‐made molecular precursors can achieve atomically precise GNRs. Here, the synthesis of GNRs on metal surfaces under ultrahigh vacuum (UHV) and chemical vapor deposition (CVD) conditions is the main focus, and the recent progress in the field is summarized. The UHV method leads to successful unambiguous visualization of atomically precise structures of various GNRs with different edge configurations. The CVD protocol, in contrast, achieves simpler and industry‐viable fabrication of GNRs, allowing for the scale up and efficient integration of the as‐grown GNRs into devices. The recent updates in device studies are also addressed using GNRs synthesized by both the UHV method and CVD, mainly for transistor applications. Furthermore, views on the next steps and challenges in the field of on‐surface synthesized GNRs are provided.

中文翻译：

石墨烯纳米带：表面合成和集成到电子设备中。

石墨烯纳米带（GNRs）是准一维石墨烯带，作为一种新型的半导体材料，在电子和光电子领域的各种应用中备受关注。GNR 表现出独特的电子和光学特性，这敏感地取决于它们的化学结构，尤其是宽度和边缘配置。因此，精确合成具有化学定义结构的 GNR 对其基础研究和设备应用至关重要。与自上而下的方法相比，使用定制的分子前体自下而上的化学合成可以实现原子级精确的 GNR。在这里，在超高真空 (UHV) 和化学气相沉积 (CVD) 条件下在金属表面合成 GNRs 是主要焦点，并总结了该领域的最新进展。UHV 方法可以成功清晰地显示具有不同边缘配置的各种 GNR 的原子级精确结构。相比之下，CVD 协议实现了更简单且工业可行的 GNR 制造，允许将生长的 GNR 放大并有效集成到设备中。使用 UHV 方法和 CVD 合成的 GNR 也解决了器件研究的最新更新，主要用于晶体管应用。此外，还提供了对表面合成 GNR 领域的下一步和挑战的看法。允许将成熟的 GNR 放大并有效集成到设备中。使用 UHV 方法和 CVD 合成的 GNR 也解决了器件研究的最新更新，主要用于晶体管应用。此外，还提供了对表面合成 GNR 领域的下一步和挑战的看法。允许将成熟的 GNR 放大并有效集成到设备中。使用 UHV 方法和 CVD 合成的 GNR 也解决了器件研究的最新更新，主要用于晶体管应用。此外，还提供了对表面合成 GNR 领域的下一步和挑战的看法。

更新日期：2020-11-12

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