Adjusting the growth kinetics of the interfacial compound layers may be a feasible way to enhance joint properties or service performance. In this study, the textured Ti₃SiC₂ was obtained by hot-deforming the sintered Ti₃SiC₂ (TSC), and the effects of the texture orientation on the interfacial microstructural evolution and growth kinetics of the interfacial compounds in the diffusion bonded TiAl/Ti₃SiC₂ joints were investigated. The texture orientation of Ti₃SiC₂ had little effect on the interfacial microstructural evolution but had a significant effect on the growth kinetics. When bonded at the same temperature, the growth rate of the interfacial compound layers in the TiAl/TSC $\parallel$ joint (TSC $\parallel$, TSC $\perp$ : Ti₃SiC₂ with [0001] texture orientation parallel, perpendicular to the bonded seam) was fastest; which was slowest in the TiAl/TSC $\perp$ joint and was in the middle in the TiAl/TSC joint. The highest shear strengths of the three different joints were similar (about 54 MPa).

调节界面化合物层的生长动力学可能是增强接头性能或使用性能的可行方法。在这项研究中，通过对烧结的Ti ₃ SiC ₂（TSC）进行热变形来获得织构化的Ti ₃ SiC ₂，并且织构取向对扩散键合TiAl中界面化合物的界面微结构演变和生长动力学的影响研究了/ Ti ₃ SiC ₂接头。Ti ₃ SiC ₂的织构取向对界面的微结构演变影响很小，但对生长动力学影响很大。当在相同温度下键合时，TiAl / TSC中界面化合物层的生长速率$\parallel$ 联合（TSC $\parallel$，TSC $\perp$：具有平行于[0001]织构取向，垂直于粘结缝的Ti ₃ SiC ₂最快。在TiAl / TSC中最慢$\perp$接头位于TiAl / TSC接头的中间。三个不同接头的最高剪切强度相似（约54 MPa）。