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Effects of texture orientation in Ti3SiC2 on growth kinetics of interfacial compound layers in diffusion bonded TiAl/Ti3SiC2 joints
Journal of the European Ceramic Society ( IF 5.8 ) Pub Date : 2020-09-17 , DOI: 10.1016/j.jeurceramsoc.2020.09.022
Qi Wang , Ming-hao Li , Guo-qing Chen , Xue-song Fu , Wen-long Zhou

Adjusting the growth kinetics of the interfacial compound layers may be a feasible way to enhance joint properties or service performance. In this study, the textured Ti3SiC2 was obtained by hot-deforming the sintered Ti3SiC2 (TSC), and the effects of the texture orientation on the interfacial microstructural evolution and growth kinetics of the interfacial compounds in the diffusion bonded TiAl/Ti3SiC2 joints were investigated. The texture orientation of Ti3SiC2 had little effect on the interfacial microstructural evolution but had a significant effect on the growth kinetics. When bonded at the same temperature, the growth rate of the interfacial compound layers in the TiAl/TSC joint (TSC , TSC : Ti3SiC2 with [0001] texture orientation parallel, perpendicular to the bonded seam) was fastest; which was slowest in the TiAl/TSC joint and was in the middle in the TiAl/TSC joint. The highest shear strengths of the three different joints were similar (about 54 MPa).



中文翻译:

Ti 3 SiC 2的织构取向对扩散结合的TiAl / Ti 3 SiC 2接头中界面化合物层生长动力学的影响

调节界面化合物层的生长动力学可能是增强接头性能或使用性能的可行方法。在这项研究中,通过对烧结的Ti 3 SiC 2(TSC)进行热变形来获得织构化的Ti 3 SiC 2,并且织构取向对扩散键合TiAl中界面化合物的界面微结构演变和生长动力学的影响研究了/ Ti 3 SiC 2接头。Ti 3 SiC 2的织构取向对界面的微结构演变影响很小,但对生长动力学影响很大。当在相同温度下键合时,TiAl / TSC中界面化合物层的生长速率 联合(TSC ,TSC :具有平行于[0001]织构取向,垂直于粘结缝的Ti 3 SiC 2最快。在TiAl / TSC中最慢接头位于TiAl / TSC接头的中间。三个不同接头的最高剪切强度相似(约54 MPa)。

更新日期:2020-10-30
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