Abstract Thin films of chemical bath deposited tin antimony sulphide (Sn2Sb2S5) were tuned by varying the deposition time between 1 and 3 h, and postdeposition heat treatments. The films were grown on soda lime glass (SLG) and on molybdenum glass (Mo-SLG) substrates, respectively. The film thickness increased with deposition time up to 2 h and decreased thereafter. Structural analysis from X-ray diffractometry showed that the films were single phase. This was corroborated by X-ray photoelectron spectroscopy (XPS) analysis. Energy-dispersive spectroscopy results give antimony/sulphur (Sb/S) ratio and antimony/tin (Sb/Sn) ratio that increased with deposition time in the SLG substrates only. Optical constants extracted from optical spectroscopy measurements give optical absorption coefficient (α) > 104 cm−1, and direct energy bandgap with values in the range 1.30 to 1.48 eV. The Hall effect measurements performed on films grown on the SLG substrates indicated that the films were p-type electrical conductivity with electrical resistivity in the range 103 to 104 Ωcm. The films grown on the Mo-SLG served as absorber layers to fabricate thin film heterojunction solar cell devices in the substrate configuration with a cadmium sulphide (CdS) window partner. The best device yielded a short-circuit current density of 20 mA/cm2, open-circuit voltage of 0.012 V and a solar conversion efficiency of 0.04%.

中文翻译：

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沉积时间和退火处理对化学沉积 Sn2Sb2S5 薄膜性能和 Sn2Sb2S5 基太阳能电池光伏性能的影响

摘要 通过在 1 到 3 小时之间改变沉积时间和沉积后热处理来调整化学浴沉积的硫化锡锑 (Sn2Sb2S5) 薄膜。薄膜分别生长在钠钙玻璃 (SLG) 和钼玻璃 (Mo-SLG) 基板上。薄膜厚度随着沉积时间的增加而增加，直至 2 小时，然后减少。X射线衍射的结构分析表明薄膜是单相的。X 射线光电子能谱 (XPS) 分析证实了这一点。能量色散光谱结果显示锑/硫 (Sb/S) 比和锑/锡 (Sb/Sn) 比仅随着在 SLG 基板中的沉积时间而增加。从光谱测量中提取的光学常数给出光吸收系数 (α) > 104 cm-1，和直接能带隙，其值在 1.30 到 1.48 eV 的范围内。在 SLG 基板上生长的薄膜上进行的霍尔效应测量表明，这些薄膜具有 p 型导电性，电阻率为 103 至 104 Ωcm。在 Mo-SLG 上生长的薄膜用作吸收层，以在具有硫化镉 (CdS) 窗口伙伴的基板配置中制造薄膜异质结太阳能电池器件。最佳器件的短路电流密度为 20 mA/cm2，开路电压为 0.012 V，太阳能转换效率为 0.04%。在 Mo-SLG 上生长的薄膜用作吸收层，以在具有硫化镉 (CdS) 窗口伙伴的基板配置中制造薄膜异质结太阳能电池器件。最佳器件的短路电流密度为 20 mA/cm2，开路电压为 0.012 V，太阳能转换效率为 0.04%。在 Mo-SLG 上生长的薄膜用作吸收层，以在具有硫化镉 (CdS) 窗口伙伴的基板配置中制造薄膜异质结太阳能电池器件。最佳器件的短路电流密度为 20 mA/cm2，开路电压为 0.012 V，太阳能转换效率为 0.04%。