The accuracy of contact resistance values of two-dimensional field-effect transistors extracted with the \textit{Y}-function considering the impact of the intrinsic mobility degradation is evaluated here. The difference between methodologies that take this factor into account and ignore it is pointed out by a detailed analysis of the approximations of the transport model used for each extraction. In contrast to the oftenly used approach where the intrinsic mobility degradation is neglected, a \textit{Y}-function-based method considering a more complete transport model yields contact resistance values similar to reference values obtained by other intricate approaches. The latter values are more suitable also to describe experimental data of two dimensional devices of different technologies. The intrinsic mobility degradation factor of two-dimensional transistors is experimentally characterized for the first time and its impact on the device performance is described and evaluated.

中文翻译：

---

不同技术中二维 FET 参数提取的 Y 函数方法的准确性

考虑到本征迁移率退化的影响，这里评估了使用 \textit{Y} 函数提取的二维场效应晶体管的接触电阻值的准确性。通过对用于每次提取的传输模型近似值的详细分析，指出了考虑该因素和忽略它的方法之间的差异。与忽略固有迁移率退化的常用方法相比，考虑更完整传输模型的基于 \textit{Y} 函数的方法产生的接触电阻值类似于通过其他复杂方法获得的参考值。后面的值也更适合描述不同技术的二维设备的实验数据。