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Enhanced Ferroelectric Polarization in TiN/HfO2/TiN Capacitors by Interface Design
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-09-06 , DOI: 10.1021/acsaelm.0c00503 Thomas Szyjka 1 , Lutz Baumgarten 1 , Terence Mittmann 2 , Yury Matveyev 3 , Christoph Schlueter 3 , Thomas Mikolajick 2, 4 , Uwe Schroeder 2 , Martina Müller 1, 5
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-09-06 , DOI: 10.1021/acsaelm.0c00503 Thomas Szyjka 1 , Lutz Baumgarten 1 , Terence Mittmann 2 , Yury Matveyev 3 , Christoph Schlueter 3 , Thomas Mikolajick 2, 4 , Uwe Schroeder 2 , Martina Müller 1, 5
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The interface formation between ferroelectric HfO2 layers and TiN bottom electrodes was studied by hard X-ray photoelectron spectroscopy and directly correlated to the electric polarization characteristics of the TiN/HfO2/TiN capacitors. We consistently deduced the interface chemistry from HfO2- and TiN-related core levels, dependent on the oxygen flow ṁ supplied before and during physical vapor deposition (PVD) growth of HfO2. The results underline the critical, twofold impact of oxygen supply on HfO2 and interface properties. When supplied before growth, the supplied oxygen stabilizes the TiN/HfO2 interface by oxidation and formation of a self-limiting (noninsulating) TiO2 intralayer. When supplied during growth, on the other hand, oxygen flows above a critical threshold reduce the oxygen vacancy concentration within the HfO2 film. We reveal a direct relation between the maximum ferroelectric remanent polarization and a critical threshold PVD oxygen exposure flow rate. The results allow for advancement of the PVD growth process in terms of a more flexible design of the ferroelectric HfO2 films with chemically stable TiN interfaces.
中文翻译：
通过界面设计增强TiN / HfO 2 / TiN电容器中的铁电极化
铁电HfO 2层与TiN底部电极之间的界面形成是通过硬X射线光电子能谱研究的，并且与TiN / HfO 2 / TiN电容器的电极化特性直接相关。我们一贯的HfO从推导出的界面化学2和TiN有关的核心层，依赖于氧气流-中号之前和期间的HfO的物理气相沉积（PVD）生长供给2。结果强调了氧气供应对HfO 2和界面特性的关键性双重影响。在生长前供应氧气时，所供应的氧气可使TiN / HfO 2稳定通过氧化形成界面，并形成自限（非绝缘）TiO 2内层。另一方面，当在生长过程中提供氧气时，氧气流超过临界阈值会降低HfO 2膜内的氧气空位浓度。我们揭示了最大铁电剩磁与临界阈值PVD氧气暴露流速之间的直接关系。根据具有化学稳定的TiN界面的铁电HfO 2膜的更灵活设计，结果允许PVD生长工艺的发展。
更新日期：2020-10-28
中文翻译：
通过界面设计增强TiN / HfO 2 / TiN电容器中的铁电极化
铁电HfO 2层与TiN底部电极之间的界面形成是通过硬X射线光电子能谱研究的，并且与TiN / HfO 2 / TiN电容器的电极化特性直接相关。我们一贯的HfO从推导出的界面化学2和TiN有关的核心层，依赖于氧气流-中号之前和期间的HfO的物理气相沉积（PVD）生长供给2。结果强调了氧气供应对HfO 2和界面特性的关键性双重影响。在生长前供应氧气时，所供应的氧气可使TiN / HfO 2稳定通过氧化形成界面，并形成自限（非绝缘）TiO 2内层。另一方面，当在生长过程中提供氧气时，氧气流超过临界阈值会降低HfO 2膜内的氧气空位浓度。我们揭示了最大铁电剩磁与临界阈值PVD氧气暴露流速之间的直接关系。根据具有化学稳定的TiN界面的铁电HfO 2膜的更灵活设计，结果允许PVD生长工艺的发展。
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