Abstract The gate induced drain leakage (GIDL) effect in negative capacitance (NC) FinFET is investigated. A Landau–Ginzburg–Devonshire equation (which considers the polarization gradient in ferroelectric material) is used to estimate the characteristics of the NC FinFET. Specifically, metal-ferroelectric-metal-insulator-semiconductor (MFMIS) and metal-ferroelectric-insulator-semiconductor (MFIS) NC FinFETs are compared, in order to figure out the effect of the internal metal layer on the GIDL effect. To analyze the impact of the polarization gradient on the GIDL effect in NC FinFET, a polarization gradient coefficient is varied. For MFMIS, the polarization gradient doesn't significantly affect the device performance. The subthreshold swing improves but the GIDL effect deteriorates because of the “uniform” NC effect in channel region. For MFIS, the device performance is explicitly affected by the polarization gradient. Smaller polarization gradients result in non-uniform NC effect in channel region, resulting in severe GIDL effects. On the other hand, higher polarization gradients alleviate GIDL effects.

中文翻译：

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MFMIS 和 MFIS 负电容 FinFET 中的栅极感应漏电 (GIDL)

摘要 研究了负电容 (NC) FinFET 中的栅极感应漏极泄漏 (GIDL) 效应。Landau-Ginzburg-Devonshire 方程（考虑铁电材料的极化梯度）用于估计 NC FinFET 的特性。具体而言，将金属-铁电-金属-绝缘体-半导体 (MFMIS) 和金属-铁电-绝缘体-半导体 (MFIS) NC FinFET 进行比较，以找出内部金属层对 GIDL 效应的影响。为了分析极化梯度对 NC FinFET 中 GIDL 效应的影响，改变极化梯度系数。对于 MFMIS，极化梯度不会显着影响器件性能。由于通道区域中的“均匀”NC 效应，亚阈值摆动有所改善，但 GIDL 效应恶化。对于 MFIS，器件性能明显受到极化梯度的影响。较小的极化梯度会导致通道区域的非均匀 NC 效应，从而导致严重的 GIDL 效应。另一方面，更高的极化梯度减轻了 GIDL 效应。