A quantitative understanding of the effect of the spatial distribution and density of lattice defects on the electron backscatter diffraction patterns requires careful consideration of the electron-matter interaction volume and the traction free boundary condition on the deformation field for near-surface defects. In this work, we couple a depth-specific dynamical electron scattering simulation with an approximate crystal deformation model to generate a single diffraction pattern from an interaction volume containing lattice defects. Two case studies are considered, namely a single edge dislocation and a low angle grain boundary. Their displacement fields, derived from the three-dimensional Yoffe-Shaibani-Hazzeldine's dislocation field model, are fed into the simulation and the resulting diffraction patterns are cross-validated using the HR-EBSD technique. In addition, diffraction contrast associated with defect deformation field is investigated with the virtual beam technique. Pattern diffuseness is quantitatively analyzed in the frequency domain as a function of dislocation density.

中文翻译：

---

包含晶格缺陷的相互作用体积的 EBSD 模式模拟

对晶格缺陷的空间分布和密度对电子背散射衍射图案的影响的定量理解需要仔细考虑电子-物质相互作用体积和近表面缺陷变形场的无牵引边界条件。在这项工作中，我们将特定深度的动态电子散射模拟与近似晶体变形模型相结合，以从包含晶格缺陷的相互作用体积生成单个衍射图案。考虑了两个案例研究，即单刃位错和小角度晶界。它们的位移场，源自三维 Yoffe-Shaibani-Hazzeldine 的位错场模型，被输入到模拟中，并使用 HR-EBSD 技术交叉验证所得的衍射图案。此外，使用虚拟光束技术研究了与缺陷变形场相关的衍射对比度。作为位错密度的函数，在频域中对图案扩散进行定量分析。