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Low motional impedance distributed Lamé mode resonators for high frequency timing applications
Microsystems & Nanoengineering ( IF 7.3 ) Pub Date : 2020-06-15 , DOI: 10.1038/s41378-020-0157-z
Anosh Daruwalla 1 , Haoran Wen 1 , Chang-Shun Liu 1 , Farrokh Ayazi 1
Affiliation  

This paper presents a novel high-Q silicon distributed Lamé mode resonator (DLR) for VHF timing reference applications. The DLR employs the nature of shear wave propagation to enable a cascade of small square Lamé modes in beam or frame configurations with increased transduction area. Combined with high efficiency nano-gap capacitive transduction, it enables low motional impedances while scaling the frequency to VHF range. The DLR designs are robust against common process variations and demonstrate high manufacturability across different silicon substrates and process specifications. Fabricated DLRs in beam and frame configurations demonstrate high performance scalability with high Q-factors ranging from 50 to 250 k, motional impedances <1 kΩ, and high-temperature frequency turnover points >90 °C in the VHF range, and are fabricated using a wafer-level-packaged HARPSS process. Packaged devices show excellent robustness against temperature cycling, device thinning, and aging effects, which makes them a great candidate for stable high frequency references in size-sensitive and power-sensitive 5 G and other IoT applications.



中文翻译:

用于高频定时应用的低运动阻抗分布式拉梅模式谐振器

本文介绍了一种用于 VHF 定时参考应用的新型高 Q 硅分布式拉梅模式谐振器 (DLR)。DLR 利用横波传播的特性在光束或框架配置中实现小方形拉梅模式的级联,并增加转换面积。结合高效的纳米间隙电容转换,它可以实现低运动阻抗,同时将频率缩放到 VHF 范围。DLR 设计对常见的工艺变化具有稳健性,并在不同的硅基板和工艺规范中展示了高可制造性。在梁和框架配置中制造的 DLR 展示了高性能的可扩展性,在 VHF 范围内具有 50 到 250 k 的高 Q 因子、运动阻抗 <1 kΩ 和高温频率转换点 >90 °C,并使用晶圆级封装的 HARPSS 工艺制造。封装器件对温度循环、器件薄化和老化效应具有出色的稳健性,这使它们成为尺寸敏感和功率敏感的 5G 和其他物联网应用中稳定高频参考的绝佳候选者。

更新日期:2020-06-15
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