Vacuum Electrochemistry Approach to Investigate Electrical Double‐Layer Capacitances of Ionic Liquid for Epitaxial Thin‐Film Electrodes of TiO2 and SrO on Niobium‐Doped (001)SrTiO3,ChemElectroChem

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Vacuum Electrochemistry Approach to Investigate Electrical Double‐Layer Capacitances of Ionic Liquid for Epitaxial Thin‐Film Electrodes of TiO2 and SrO on Niobium‐Doped (001)SrTiO3
ChemElectroChem ( IF 3.5 ) Pub Date : 2020-06-15 , DOI: 10.1002/celc.202000620
Chika Takahashi ₁ , Mariko Kanai ₁ , Shingo Maruyama ₁ , Yuji Matsumoto ₁

Affiliation

Niobium‐doped (001)SrTiO₃ (Nb:STO) single crystal, and epitaxial anatase (001)TiO₂ and (001)SrO films, which were subsequently deposited on the Nb:STO by pulsed laser deposition, were electrochemically investigated with ionic liquid (IL) in a vacuum. After being prepared by cleaning and/or depositing the films, the electrode surfaces were characterized by observing the reflection of high‐energy electron diffraction, prior to the electrochemical measurements. Electrochemical impedance spectroscopy as well as cyclic voltammetry were then performed, and the electrical double‐layer (EDL) capacitance at their interfaces with the IL were successfully evaluated. The EDL capacitance of IL was several μF cm⁻² for Nb:STO and gradually increased to over 10 μF cm⁻² with an increase of the thickness of the deposited TiO₂ films. In contrast, as SrO was being deposited, the EDL capacitance gradually decreased, approaching a constant value of about 1.4 μF cm⁻², which was significantly smaller than those values achieved for TiO₂ films and single‐crystal Nb:STO. For different oxide/IL interfaces, a possible correlation between their measured EDL capacitance and the ionicity of the oxides is discussed.

中文翻译：

真空电化学法研究掺铌（001）SrTiO3上TiO2和SrO外延薄膜电极的离子液体电双层电容

用离子电化学方法研究了掺铌（001）SrTiO ₃（Nb：STO）单晶以及外延锐钛矿（001）TiO ₂和（001）SrO薄膜，随后通过脉冲激光沉积在Nb：STO上沉积了该薄膜真空中的液体（IL）。在通过清洁和/或沉积膜制备后，在进行电化学测量之前，通过观察高能电子衍射的反射来表征电极表面。然后进行了电化学阻抗谱和循环伏安法，并成功评估了它们与IL界面处的双电层（EDL）电容。对于Nb：STO ，IL的EDL电容为几μFcm ^-2，并逐渐增加到10μFcm以上^-2随着沉积的TiO ₂膜厚度的增加而增加。相反，随着SrO的沉积，EDL电容逐渐减小，达到约1.4μFcm ^-2的恒定值，该值明显小于TiO ₂膜和单晶Nb：STO的值。对于不同的氧化物/ IL界面，讨论了其测得的EDL电容与氧化物的离子性之间的可能相关性。

更新日期：2020-08-03

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