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Semiconductor/dielectric interface in organic field-effect transistors: charge transport, interfacial effects, and perspectives with 2D molecular crystals
Advances in Physics: X ( IF 6 ) Pub Date : 2020-04-10 , DOI: 10.1080/23746149.2020.1747945
Mengjiao Pei 1 , Jianhang Guo 1 , Bowen Zhang 1 , Sai Jiang 1 , Ziqian Hao 1 , Xin Xu 1 , Yun Li 1
Affiliation  

ABSTRACT

Organic field-effect transistors (OFETs) have been the hotspot in information science for many years as the most fundamental building blocks for state-of-the-art organic electronics. During the field-effect modulation of the semiconducting channel, the gate dielectric always has a significant influence on the charge transport behaviours. Hence, understanding of the nature of charge carriers at the semiconductor/dielectric interface and realizing functional OFETs with superior performance have been the cornerstones for the sustainable advancement in organic electronics. With the joint efforts of predecessors, various basic theories and models have been advanced to describe the charge transport processes in organic crystals. To make a further breakthrough, more accurate correlation between the electrostatic properties of dielectrics and charge carrier behaviours is urgently needed. The high-quality interface-like films, without nonideal factors, two-dimensional molecular crystals (2DMCs), have been spotted as a powerful platform for direct and accurate characterization of the intrinsic charge transport behaviours at the semiconductor/dielectric interface. In this article, the recent breakthroughs in the physics of charge transport, interfacial effects, and perspectives with 2DMCs in OFETs are reviewed, providing great benefits to penetrate the fundamental studies and keep up with the revolutionary advancement in organic-electronics road map.



中文翻译:

有机场效应晶体管中的半导体/介电界面:电荷传输,界面效应以及二维分子晶体的视角

摘要

多年来,有机场效应晶体管(OFET)一直是信息科学领域的热点,它是最先进的有机电子技术的最基本组成部分。在半导体沟道的场效应调制期间,栅极电介质始终会对电荷传输行为产生重大影响。因此,了解半导体/电介质界面处的载流子的性质并实现具有优异性能的功能性OFET已成为有机电子技术可持续发展的基石。在前辈的共同努力下,提出了各种基本理论和模型来描述有机晶体中的电荷传输过程。为了取得进一步的突破,迫切需要在电介质的静电特性和电荷载流子行为之间建立更精确的关联。高质量的类界面膜,没有非理想因素,二维分子晶体(2DMC),已被发现为直接/准确表征半导体/电介质界面上固有电荷传输行为的强大平台。本文回顾了OFET中电荷传输物理,界面效应以及2DMC的观点方面的最新突破,这为渗透基础研究并紧跟有机电子路线图的革命性进展提供了巨大益处。人们已经发现它已成为一个强大的平台,可以直接,准确地表征半导体/电介质界面上的固有电荷传输行为。本文回顾了OFET中电荷传输物理,界面效应以及2DMC的观点方面的最新突破,这为渗透基础研究并紧跟有机电子路线图的革命性进展提供了巨大益处。人们已经发现它已成为一个强大的平台,可以直接,准确地表征半导体/电介质界面上的固有电荷传输行为。本文回顾了OFET中电荷传输物理,界面效应以及2DMC的观点方面的最新突破,这为渗透基础研究并紧跟有机电子路线图的革命性进展提供了巨大益处。

更新日期:2020-04-20
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