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Enhancement‐Mode β‐Ga2O3 Metal‐Oxide‐Semiconductor Field‐Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2019-12-22 , DOI: 10.1002/pssr.201900586 Yuanjie Lv 1 , Xingye Zhou 1 , Shibing Long 2 , Yuangang Wang 1 , Xubo Song 1 , Xuanze Zhou 2 , Guangwei Xu 2 , Shixiong Liang 1 , Zhihong Feng 1 , Shujun Cai 1 , Xingchang Fu 1 , Aimin Pu 1 , Ming Liu 3
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2019-12-22 , DOI: 10.1002/pssr.201900586 Yuanjie Lv 1 , Xingye Zhou 1 , Shibing Long 2 , Yuangang Wang 1 , Xubo Song 1 , Xuanze Zhou 2 , Guangwei Xu 2 , Shixiong Liang 1 , Zhihong Feng 1 , Shujun Cai 1 , Xingchang Fu 1 , Aimin Pu 1 , Ming Liu 3
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Herein, high‐performance enhancement‐mode (E‐mode) β‐Ga2O3 metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) are achieved on Si‐doped homoepitaxial films. Oxygen annealing (OA) treatment under the gate region is used to effectively exhaust the channel electron, resulting in the normally off operation of the device. The threshold voltage, defined as that at the drain current of 0.1 mA mm−1, for the fabricated device is extracted to be 4.1 V. Moreover, double source‐connected field plates are used to suppress the peak electric fields in both Ga2O3 channel and SiNx passivation layer. The fabricated β‐Ga2O3 MOSFETs with gate‐to‐drain distance (Lgd) of 17 μm exhibit a record high breakdown voltage over 3000 V. It is shown that the OA treatment is a new way to obtain high‐performance E‐mode β‐Ga2O3 power MOSFETs.
中文翻译：
通过氧退火实现超过3000 V的高击穿电压的增强型β-Ga2O3金属氧化物半导体场效应晶体管
在这里，在掺Si的同质外延膜上实现了高性能的增强型（E模式）β－Ga 2 O 3金属氧化物半导体场效应晶体管（MOSFET）。栅极区下方的氧退火（OA）处理用于有效地耗尽沟道电子，从而导致器件正常关闭工作。所制造的器件的阈值电压定义为漏极电流为0.1 mA mm -1时的阈值电压为4.1V。此外，使用双源极连接的场板来抑制两个Ga 2 O中的峰值电场3通道和SiN x钝化层。所制造的β -Ga 2ø 3级的MOSFET与栅极到漏极的距离（大号GD为17μm表现出超过3000 V.结果表明，在OA治疗是获得高性能的E模式的新方式的记录高击穿电压的）β -Ga 2 O 3功率MOSFET。
更新日期：2019-12-22
中文翻译：
通过氧退火实现超过3000 V的高击穿电压的增强型β-Ga2O3金属氧化物半导体场效应晶体管
在这里，在掺Si的同质外延膜上实现了高性能的增强型（E模式）β－Ga 2 O 3金属氧化物半导体场效应晶体管（MOSFET）。栅极区下方的氧退火（OA）处理用于有效地耗尽沟道电子，从而导致器件正常关闭工作。所制造的器件的阈值电压定义为漏极电流为0.1 mA mm -1时的阈值电压为4.1V。此外，使用双源极连接的场板来抑制两个Ga 2 O中的峰值电场3通道和SiN x钝化层。所制造的β -Ga 2ø 3级的MOSFET与栅极到漏极的距离（大号GD为17μm表现出超过3000 V.结果表明，在OA治疗是获得高性能的E模式的新方式的记录高击穿电压的）β -Ga 2 O 3功率MOSFET。
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