N‐type microcrystalline silicon carbide (μc‐SiC:H(n)) is a wide bandgap material that is very promising for the use on the front side of crystalline silicon (c‐Si) solar cells. It offers a high optical transparency and a suitable refractive index that reduces parasitic absorption and reflection losses, respectively. In this work, we investigate the potential of hot wire chemical vapor deposition (HWCVD)–grown μc‐SiC:H(n) for c‐Si solar cells with interdigitated back contacts (IBC). We demonstrate outstanding passivation quality of μc‐SiC:H(n) on tunnel oxide (SiO₂)–passivated c‐Si with an implied open‐circuit voltage of 742 mV and a saturation current density of 3.6 fA/cm². This excellent passivation quality is achieved directly after the HWCVD deposition of μc‐SiC:H(n) at 250°C heater temperature without any further treatments like recrystallization or hydrogenation. Additionally, we developed magnesium fluoride (MgF₂)/silicon nitride (SiN_x:H)/silicon carbide antireflection coatings that reduce optical losses on the front side to only 0.47 mA/cm² with MgF₂/SiN_x:H/μc‐SiC:H(n) and 0.62 mA/cm² with MgF₂/μc‐SiC:H(n). Finally, calculations with Sentaurus TCAD simulation using MgF₂/μc‐SiC:H(n)/SiO₂/c‐Si as front side layer stack in an IBC solar cell reveal a short‐circuit current density of 42.2 mA/cm², an open‐circuit voltage of 738 mV, a fill factor of 85.2% and a maximum power conversion efficiency of 26.6%.

中文翻译：

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用于c-Si太阳能电池正面的透明碳化硅/隧道SiO2钝化：使得Jsc> 42 mA / cm2，iVoc为742 mV

N型微晶碳化硅（μc-SiC：H（n））是一种宽带隙材料，非常有希望用于晶体硅（c-Si）太阳能电池的正面。它具有很高的光学透明度和合适的折射率，分别降低了寄生吸收和反射损耗。在这项工作中，我们研究了带交叉背接触（IBC）的c-Si太阳能电池用热线化学气相沉积（HWCVD）生长的μc-SiC：H（n）的潜力。我们证明了μc-SiC：H（n）在隧道氧化物（SiO ₂）钝化的c-Si上具有出色的钝化质量，隐含的开路电压为742 mV，饱和电流密度为3.6 fA / cm ^2。。在250°C的加热器温度下HcCVD沉积μc-SiC：H（n）之后，无需任何进一步处理（例如重结晶或氢化）即可直接获得这种出色的钝化质量。此外，我们开发了氟化镁（MgF ₂）/氮化硅（SiN _x：H）/碳化硅抗反射涂层，使用MgF ₂ / SiN _x：H / μc‐时，将正面的光学损耗降低到仅0.47 mA / cm ² SiC：H（n）和0.62 mA / cm ²以及MgF ₂ /μc-SiC：H（n）。最后，使用MgF ₂ /μc-SiC：H（n）/ SiO ₂用Sentaurus TCAD模拟进行计算/ c-Si作为IBC太阳能电池的正面叠层，其短路电流密度为42.2 mA / cm ²，开路电压为738 mV，填充系数为85.2％，最大功率转换效率为26.6％。