2025年

30. Xinyue Liu, Ziqiang Li, Yanfeng Ge, Yong Liu, Xing Wang, and Wenhui Wan*, Integration of promising piezoelectric and photocatalytic properties in Janus InXY (X = S, Se, Te; Y = Cl, Br, I) monolayers and their heterojunction, Phys. Rev. B  112 (2025)115420.

29. Xixiang Zhang; Xinmei Yu; Liang Ma; Yanfeng Ge; Yong Liu; Wenhui Wan*; First principles study on the oxidation resistance of two-dimensional intrinsic and defective GeO2. Surf. Interfaces, 69 (2025) 106648.

28. Chunyu Zhou*; Shuai Chen; Wenhui Wan*; Yong Liu; Guanyu Wang; First-principles study of the hole mobility of pristine and Mg-doped Ga2O3 under pressure. Mater. Sci. Semicond. Process. 199 (2025) 109781.

27. Xiaoli Jin; Wenhui Wan*; Busheng Wang; Yong Liu*; First-principles study on 2D ferromagnetic semiconductor in Janus single-layer CrXY (X = P, As; Y = Cl, Br, I). Physica E 170 (2025) 116230.

2024年

26. Chen Zhou; Wenhui Wan*; Yanfeng Ge; Yong liu*, Two dimensional MoF3 and Janus Mo2F3X3(X = Cl, Br, I): intrinsic ferromagnetic semiconductor, large perpendicular magnetic anisotropy, and hole-induced room-temperature ferromagnetism. J. Phys. Commun. 8 125006 (2024).

25. Wenhui Wan*; YiRan Peng; Yanfeng Ge; Botao Fu; Yong Liu, Robust in-plane ferroelectricity, high hole mobility, and low thermal conductivity in GeO monolayer: A first-principles study. Physica E 162 (2024) 115997.

24. YiRan Peng; Yanfeng Ge; Yong Liu; Katarzyna Markowska; Wenhui Wan*, The enhancement of ferromagnetism in 2D tetragonal CoSe by electric fields and Janus engineering. Journal of Physics D: Applied Physics.

23. Rui Guo; Xing Wang; Yanfeng Ge; Yong Liu; Wenhui Wan*, High piezoelectric coefficients and rich phase transitions in ternary TlXY (X = S, Se; Y = Cl, Br, I) monolayers. Physica B 683 (2024) 415927.

2023年

22. Xing Wang; Wenhui Wan*; Yanfeng Ge; Yong Liu*, Topological semimetal phases in a family of monolayer X3YZ6 (X=Nb,Ta, Y=Si,Ge,Sn, Z=S,Se,Te) with abundant nodal lines and nodes. Physica E 149 (2023) 115679.

21. Wenhui Wan*; Botao Fu; Chang Liu; Yanfeng Ge; Yong Liu, Two-dimensional XY ferromagnetism above room temperature in Janus monolayer V2XN (X = P, As). Phys. Chem. Chem. Phys. (2023), 25, 9311.

20. Rui Zhao; Rui Guo; Yiran Peng; Yanfeng Ge; Yong Liu; Wenhui Wan*, The unexpected magnetism in 2D group-IV-doped GaN for spintronic applications. Physica B 666 (2023) 415087.

19. Rui Guo; Rui Zhao; Yanfeng Ge; Yong Liu; Wenhui Wan*, Formation of 2D GaXY (X = S, Se; Y = F, Cl, Br, I) with enhanced piezoelectricity via decomposition of Ga-monochalcogenide by halogenation. Appl. Phys. Lett. 123, 063102 (2023).

18. Wenhui Wan*; Rui Guo; Yanfeng Ge; Yong Liu, Carrier and phonon transport in 2D InSe and its Janus structures. J. Phys.: Condens. Matter 35 133001 (2023).

17. Wenhui Wan*; Rui Zhao; Yanfeng Ge; Yong Liu, Janus V2AsP monolayer : a ferromagnetic semiconductor with a narrow band gap, a high Curie temperature and controllable magnetic anisotropy. J. Phys.: Condens. Matter 35 065801 (2023).

2022年

16. Xing Wang; Wenhui Wan*; Yanfeng Ge; Kaicheng Zhang; Yong Liu*, Quantum spin Hall effect in two-dimensional transition-metal chalcogenides MX5 (M = Zr, Hf and X = S, Se, Te). Physica E 143 (2022) 115325.

15. Na Kang; Wenhui Wan*; Bu-Sheng Wang; Yanfeng Ge; Kai-Cheng Zhang; Yong Liu*, A First‐Principles Study of the Structural, Magnetic, Optical Properties and Doping Effect in Chromium Arsenide. Phys. Status Solidi, (2022), 259(7): 2200062.

14.Wenhui Wan*; Na Kang; Yanfeng Ge; Yong Liu*, The Theoretical Study of Unexpected Magnetism in 2D Si-Doped AlN. Front. Phys., 11 March 2022.

2021年

13. Shan Zhao; Wenhui Wan*; Yanfeng Ge; Yong Liu*, Prediction of Chalcogen‐Doped VCl3 Monolayers as 2D Ferromagnetic Semiconductors with Enhanced Optical Absorption. ANNALEN DER PHYSIK (2021), 533, 2100064.

12. Na Kang; Wenhui Wan*; Yanfeng Ge; Yong Liu*, Diverse magnetism in stable and metastable structures of CrTe. Front. Phys. 16, 63506 (2021).

2020年

11. Wenhui Wan*; Ziwei Song; Shan Zhao; Yanfeng Ge; Yong Liu, Modulation of heat transport in two-dimensional group-III chalcogenides. J. Phys. D: Appl. Phys. 53 185102 (2020).

10. Wenhui Wan*; Shan Zhao; Chuang Wang; Yanfeng Ge; Yong Liu, Theoretical study of the structure and magnetism of Ga1−xVxSb compounds for spintronic applications. Appl. Phys. Lett. 116, 082105 (2020).

2019年

9. Wenhui Wan*; Yanfeng Ge; Yong Liu, Strong phonon anharmonicity and low thermal conductivity of monolayer tin oxides driven by lone-pair electrons. Appl. Phys. Lett. 114, 031901 (2019).

8. Wenhui Wan*; Shan Zhao; Yanfeng Ge; Yong Liu, Phonon and electron transport in Janus monolayers based on InSe. J. Phys.: Condens. Matter 31 435501 (2019).

7. Wenhui Wan*; Chang Liu; YuGui Yao; Shan Guan, 二维铁电材料的理论研究进展. 湘潭大学自然科学学报,2019,41(5):23-39.

更早

6. Chang Liu; Wenhui Wan*; Jie Ma; Wei Guo and Yugui Yao*. Robust ferroelectricity in two-dimensional SbN and BiP. Nanoscale, 2018, 10, 7984

5. Wenhui Wan; Chang Liu; Wende Xiao; Yugui Yao*, Promising ferroelectricity in 2D group IV tellurides: a first-principles study. Appl. Phys. Lett. 111, 132904 (2017).

4. Wenhui Wan, Yugui Yao*, Liangfeng Sun, Cheng-Cheng Liu, Fan Zhang*, Topological, Valleytronic, and Optical Properties of Monolayer PbS. Adv. Mater. 2017, 29, 1604788.

3. Wenhui Wan, Yanfeng Ge, Fan Yang and Yugui Yao*, Phonon-mediated superconductivity in silicene predicted by first-principles density functional calculations. EPL 104 36001 (2013).

2. Wenhui Wan, Bangguo Xiong, Wenxing Zhang, Ji Feng and Enge Wang*, The effect of the electron-phonon coupling on the thermal conductivity of silicon nanowires. J. Phys.: Condens. Matter 24 295402 (2012).

1. Wenhui Wan, Qianfan Zhang, Yi Cui and Enge Wang*, First principles study of lithium insertion in bulk silicon. J. Phys.: Condens. Matter 22 415501 (2010).