题目：Improving the Performance of QD Photodetectors through PEAI-Based Interface Passivation

作者：Yihong Tang（唐屹弘）, Zhuoying Huang（黄卓颖）, Jingyi Tian（田景怡）, Fan Fang（方凡）, Haodong Tang（唐浩东）, and Wei Chen（陈威）

摘要：Interfacial engineering using phenethyl-ammonium iodide (PEAI) is employed to improve inverted PbS quantum dot (QD) short-wave infrared photodetectors. Placement of a PEAI layer between NiOx and the QD active layer passivates defects, suppresses recombination, and reduces low-frequency noise. Optimal treatment lowers the 1 Hz noise current density from 3.06 × 10^-11 to 3.04 × 10^-12 A/√Hz, yielding a specific detectivity enhancement from 2.85 × 10^9 to 1.42 × 10^10 Jones at 1150 nm. Bandwidth and temporal response are improved while maintaining operational stability, offering a CMOS-compatible pathway toward high-performance SWIR imaging.