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Quantifying the orbital-to-spin moment ratio under dynamic excitation Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-18 Satoru Emori, Rachel E. Maizel, Galen T. Street, Julia L. Jones, Dario A. Arena, Padraic Shafer, Christoph Klewe
The orbital component of magnetization dynamics, e.g., excited by ferromagnetic resonance (FMR), may generate “orbitronic” effects in nanomagnetic devices. Yet, distinguishing orbital dynamics from spin dynamics remains a challenge. Here, we employ x-ray magnetic circular dichroism (XMCD) to quantify the ratio between the orbital and spin components of FMR-induced dynamics in a Ni80Fe20 film. By applying
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The degradation mechanism and stability enhancement of GaSe lateral memristors Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-18 Junhao Tang, Runze Zhan, Enzi Chen, Qing Zhu, Weijian Li, Dawei Li, Zhenye Lu, Xi Wan, Kun Chen
Memristors have attracted considerable attention in the fields of high-density memory and artificial intelligence. However, the performance and stability of memristors may undergo noticeable changes over time, particularly in the case of lateral memristors. In this study, based on two-dimensional (2D) GaSe lateral memristors, we observed that the performance of devices degrades rapidly within a week
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Colossal barocaloric effect of the spin-crossover compound {Fe(pz)2(BH3CN)2} near room temperature Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-18 Ruixin Li, Zhe Zhang, Yurii S. Bibik, Il'ya A. Gural'skiy, Igor. V. Zatovsky, Zhaodong Liu, Quanjun Li, Bing Li, Georgiy Levchenko, Bingbing Liu
As one of the most likely alternatives to traditional vapor compression refrigeration technology, solid refrigeration technology based on the barocaloric effect (BCE) has attracted extensive attention in recent years. Spin-crossover (SCO) compounds are considered suitable for working at low driving pressures due to high-pressure sensitivity and small hysteresis width. However, the entropy change (ΔSSCO)
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Electrolyte optimization for sodium-sulfur batteries Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-18 Janak Basel, Nawraj Sapkota, Mihir Parekh, Apparao M. Rao
Due to high theoretical capacity, low cost, and high energy density, sodium-sulfur (Na-S) batteries are attractive for next-generation grid-level storage systems. However, the polysulfide shuttle leads to a rapid capacity loss in sodium-sulfur batteries with elemental sulfur as the cathode material. Most previous studies have focused on nanoengineering methods for creating stable Na anodes and S cathodes
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Adjustable artificial neuron based on vortex magnetic tunnel junction Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-18 Yuxuan Wu, Yanxiang Luo, Like Zhang, Shige Dai, Baoshun Zhang, Yan Zhou, Bin Fang, Zhongming Zeng
In this Letter, we demonstrate an adjustable artificial neuron based on vortex magnetic tunnel junction (MTJ). By applying a bias current to vortex MTJ, the device exhibits splendid characteristics of stochastic switching and nonlinear rectification. The stochastic switching probability induced by spin transfer torque as a function of bias current can simulate sigmoid activation functions. The nonlinear
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Auger-limited minority carrier lifetime in GeSn/SiGeSn quantum well Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-15 Perry C. Grant, Preston T. Webster, Rigo A. Carrasco, Julie V. Logan, Christopher P. Hains, Nathan Gajowski, Shui-Qing Yu, Baohua Li, Christian P. Morath, Diana Maestas
A minority carrier lifetime of 2.7 ns is measured at 77 K for a GeSn/SiGeSn single quantum well using time-resolved photoluminescence, and subsequent analyses indicate that the lifetime is Auger-limited. The 77 K lifetime is evaluated as a function of stepwise dose of 63 MeV proton irradiation up to a fluence of 1.5 × 1012 p+/cm2 with no discernable reduction in the observed lifetime, which implies
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Improving magnetic-field resilience of NbTiN planar resonators using a hard-mask fabrication technique Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-15 A. Bahr, M. Boselli, B. Huard, A. Bienfait
High-quality factor microwave resonators operating in a magnetic field are a necessity for some quantum sensing applications and hybrid platforms. Losses in microwave superconducting resonators can have several origins, including microscopic defects, usually known as two-level-systems. Here, we characterize the magnetic field response of NbTiN resonators patterned on sapphire and observe clear absorption
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Integration of low-thermal-budget In2O3 NMOS inverter and GaN HEMT for power electronics Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-14 Mritunjay Kumar, Saravanan Yuvaraja, Na Xiao, Manoj Kumar Rajbhar, Ganesh Mainali, Vishal Khandelwal, Xiao Tang, Xiaohang Li
Herein, we demonstrated an “interposer”-style integration of In2O3 FET-based gate-driver circuitry wire bonded to an AlGaN/GaN high electron mobility transistor (HEMT) device grown on a GaN-on-Si substrate, and its feasibility for power electronics was discussed. The normally-on AlGaN/GaN HEMT exhibited a threshold voltage of −2.8 V, with a maximum drain current density of 265 mA/mm. The device also
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Empirical test of the Kelvin relation in thermoelectric nanostructures Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-14 Hari Prasad Panthi, Ruchika Dhawan, Hal Edwards, Mark Lee
Thermoelectric (TE) nanostructures with dimensions of ∼100 nm can show substantially better TE properties compared to the same material in the bulk form due to charge and heat transport effects specific to the nanometer scale. However, TE physics in nanostructures is still described using the Kelvin relation (KR) Π = αT, where Π is the Peltier coefficient, α the thermopower, and T the absolute temperature
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Optimum asymmetry for nanofabricated refractometric sensors at quasi-bound states in the continuum Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-14 Keisuke Watanabe, Masanobu Iwanaga
A symmetry-protected bound state in the continuum (BIC) is one of the bases for high-resolution photonic refractometric sensors that rely on spectral shifts. However, a trade-off exists between the quality (Q) factors and the resonance amplitudes when the asymmetries of the unit cell are changed, making it difficult to intuitively determine the optimal nanostructural geometry. In this study, we present
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Exploring challenges and potential for a commercially viable piezoelectric energy harvesting system—Can Energy-as-Data concept thrive? Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-14 Yang Bai
Over the past two decades, piezoelectric energy harvesting systems have undergone extensive research, spanning from materials to devices and electronics. Recently, there has been a notable introduction of the term “self-powered sensors,” which essentially refers to conventional, older passive sensors, associated with piezoelectric (or triboelectric) nanogenerators. Unfortunately, neither approach has
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Silicon spin qubit noise characterization using real-time feedback protocols and wavelet analysis Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-14 Nard Dumoulin Stuyck, Amanda E. Seedhouse, Santiago Serrano, Tuomo Tanttu, Will Gilbert, Jonathan Yue Huang, Fay Hudson, Kohei M. Itoh, Arne Laucht, Wee Han Lim, Chih Hwan Yang, Andre Saraiva, Andrew S. Dzurak
Recently, several groups have demonstrated two-qubit gate fidelities in semiconductor spin qubit systems above 99%. Achieving this regime of fault-tolerant compatible high fidelities is nontrivial and requires exquisite stability and precise control over the different qubit parameters over an extended period of time. This motivates the search for the efficient calibration of qubit control parameters
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Enhancement of spin to charge conversion efficiency at the topological surface state by inserting normal metal spacer layer in the topological insulator based heterostructure Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-14 Sayani Pal, Anuvab Nandi, Sambhu G. Nath, Pratap Kumar Pal, Kanav Sharma, Subhadip Manna, Anjan Barman, Chiranjib Mitra
In this study, we report efficient spin to charge conversion (SCC) in the topological insulator (TI) based heterostructure (BiSbTe1.5Se1.5/Cu/Ni80Fe20) by using spin-pumping technique, where BiSbTe1.5Se1.5 is the TI and Ni80Fe20 is the ferromagnetic (FM) layer. The SCC, characterized by inverse Edelstein effect length (λIEE) in the TI material, gets altered with an intervening Copper (Cu) layer, and
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Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001) Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-14 Yuhua Tsai, Masaaki Kobata, Tatsuo Fukuda, Hajime Tanida, Toru Kobayashi, Yoshiyuki Yamashita
We investigated the atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001) using x-ray absorption near the edge structure (XANES) and hard x-ray photoelectron spectroscopy. We found that the Sn dopant had only one chemical state, which was a Sn4+ oxidation state. The bond length around the Sn dopant atom became longer due to the relaxation effect after the Sn dopant
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Enhanced ferroelectric photovoltaic performance of Bi2FeCrO6 thin films for neuromorphic computing applications Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-14 Yucheng Kan, Jianquan Liu, Rui Chen, Yuan Liu, Hongru Wang, Mingyue Long, Bobo Tian, Junhao Chu, Ye Chen, Lin Sun
Nowadays, ferroelectric photovoltaic synapses have attracted great attention due to its polarization controllable and self-powered features. However, the large bandgaps of ferroelectric oxide materials limit its application. This study focuses on the enhancement of ferroelectric photovoltaic properties and the synaptic application of Bi2FeCrO6 (BFCO) device. It is found that the bandgap of BFCO can
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Antiferromagnetic magnetostriction of IrMn detected by angular dependent exchange bias Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-14 Haoyu Lin, Kun Zheng, Jing Meng, Jiang Liu, Zhenjie Zhao, Dongmei Jiang, Yang Xu, Tian Shang, Qingfeng Zhan
The manipulation of Néel vector of antiferromagnetic (AFM) layer by an applied stress has attracted considerable attention due to the technical importance for AFM-based spintronic devices. Here, we fabricated CoFeB/IrMn and Ni/IrMn exchange bias (EB) bilayers on PMN-PT(011) to quantitatively study the AFM magnetostrictive behaviors of the IrMn layer. Numerical calculations based on the Stoner–Wohlfarth
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Rapid millisecond heating via ferromagnetic resonance in MnFe2O4 nanoparticles Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-14 Yongsub Kim, Jae-Hyeok Lee, Rajni Verma, Sang-Koog Kim
This study undertakes an exhaustive analysis of rapid heat generation in MnFe2O4 nanoparticles through ferromagnetic resonance within an ultra-fast timeframe of 1 ms. Real-time monitoring of temperature during single-field-pulse excitations provided detailed insights into the temperature rise profiles. By integrating micromagnetic simulations with analytical modeling—taking into account both convective
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Opto-electrochemical variation with gel polymer electrolytes in transparent electrochemical capacitors for ionotronics Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-14 Chandini Kumar, Arun K. Sebastian, Prasutha Rani Markapudi, Mustehsan Beg, Senthilarasu Sundaram, Amir Hussain, Libu Manjakkal
Advanced flexible ionotronic devices have found excellent applications in the next generation of electronic skin (e-skin) development for smart wearables, robotics, and prosthesis. In this work, we developed transparent ionotronic-based flexible electrochemical capacitors using gel electrolytes and indium tin oxide (ITO) based transparent flexible electrodes. Different gel electrolytes were prepared
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1D graphene nanoribbons-mediated defect engineering in 2D MXene for high-performance supercapacitors Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-14 Parika Mahajan, Sagar Sardana, Aman Mahajan
Carbon-based supercapacitors have been extensively explored by the virtue of their exceptional performance in terms of charge-storage capacity, electrical conductivity, and good stability. However, the rush to find potential approaches for increasing their specific capacitance and specific energy without adversely affecting the specific power is still exciting. Herein, we synthesized hierarchically
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S-band acoustoelectric amplifier in an InGaAs-AlScN-SiC architecture Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-14 L. Hackett, X. Du, M. Miller, B. Smith, S. Santillan, J. Montoya, R. Reyna, S. Arterburn, S. Weatherred, T. A. Friedmann, R. H. Olsson, M. Eichenfield
Here, we report on an acoustoelectric slab waveguide heterostructure for phonon amplification using a thin Al0.58Sc0.42N film grown directly on a 4H-SiC substrate with an ultra-thin In0.53Ga0.47As epitaxial film heterogeneously integrated onto the surface of the Al0.58Sc0.42N. The aluminum scandium nitride film grown directly on silicon carbide enables a thin (∼850 nm thick) piezoelectric film to be
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Field-free switching in perpendicular Ta/CoFeB/MgO multilayers achieved by annealing temperature gradient Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-14 Shuanghai Wang, Xingze Dai, Kun He, Jin Wang, Xiaolong Zhang, Qixun Guo, Guanqun Feng, Yongkang Xu, Yafeng Deng, Ruobai Liu, Jun Du, Yong-Lei Wang, Chao Wang, Yongbing Xu, Liang He
Current flowing through heavy metals generates spin current by the spin Hall effect (SHE), and spin current exerts a torque on the adjacent magnetic layer, thereby switching the magnetization direction of the magnetic layer. Normally, an external magnetic field must be used to break symmetry in the response to the SHE torque, to realize deterministic switching. However, the presence of magnetic fields
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Inverse design method of thermal devices with thermal Hall effect Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-14 Yuki Sato, Teppei Deguchi, Tsuyoshi Nomura, Ercan M. Dede, Atsushi Kawamoto
Efficient thermal management is important for both performance and efficiency improvements of thermal devices. For designing reasonable materials and structures of such devices, various design methods were proposed where the material thermal conductivity tensors were positive definite and symmetric based on the physical requirements. Here, we propose an inverse design method for thermal devices considering
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Fractal-inspired multifrequency piezoelectric energy harvesters Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-14 Jiheng Ding, Daican Zhou, Min Wang, Zhongjie Li, Yi Sun, Huayan Pu, Qiqi Pan, Biao Wang
In this Letter, we propose fractal-based piezoelectric energy harvesters (PEHs) for broadband energy scavenging. The introduction of fractal topology into transducers significantly alleviates the inherent limitation of a narrow working bandwidth in commonly used cantilever PEHs. We conduct a finite element analysis and experiments to exploit the performance of fractal cantilever PEHs with different
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The effect of surface-step-terrace on energy storage density and working temperature of BaZr0.2Ti0.8O3 epitaxial films Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-14 Yi-qin Lu, Tian-Yi Hu, Zixiong Sun, Yunbo Zhang, Yupeng Liu, Yanzhu Dai, Guangliang Hu, Ming Liu, Chunrui Ma, Chun-lin Jia
Dielectric film capacitors have been widely used in various electronic devices due to the high energy storage density and high charge–discharge speed. The energy storage performances are highly determined by the strain status of the films. Herein, we improved the energy storage performances of epitaxial BaZr0.2Ti0.8O3 film through surface-step-terrace in the vicinal substrate. It is found that the
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Thermal nanoconversion of ferromagnetic nanoislands Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-14 O. J. Barker, A. Mohammadi-Motlagh, A. J. Wright, R. Batty, H. Finch, A. Vezzoli, P. S. Keatley, L. O'Brien
In this work, we investigate the use of post-fabrication thermal nanoconversion (TNC), using a heated scanning probe tip, to modify the magnetic properties of Ni80Fe20 elliptical nanoislands with varying aspect ratio. Despite Ni80Fe20 being unoptimized for TNC, by comparing quasistatic and dynamic magneto-optical Kerr effect microscopy measurements, we demonstrate that TNC at a contact temperature
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Investigation of the surface band structure and the evolution of defects in β-(AlxGa1−x)2O3 Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-14 J. Li, X. H. Chen, J. G. Hao, F. F. Ren, S. L. Gu, J. D. Ye
This study examines the electronic and luminescent properties of β-(AlxGa1−x)2O3 (0 ≤ x ≤ 0.42) thin films grown on (0001) sapphire using laser-MBE, with a focus on the evolution of defect energy levels and their impact on surface Fermi level pinning and luminescence. X-ray photoelectron spectroscopy (XPS) and cathodoluminescence (CL) have been employed to analyze surface band bending and defect evolution
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Supersymmetric quantum cascade laser array Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-14 Yuhao Jin, Bofeng Zhu, Kian Hua Tan, Satrio Wicaksono, Carlo Sirtori, Soon Fatt Yoon, Qi Jie Wang
Electrically injected supersymmetric (SUSY) quantum cascade laser (QCL) array of the wavelength at around 13.4 μm has been demonstrated. By applying SUSY transformations to the main array with five laser elements, a lossy superpartner array with four laser elements is constructed. As a result, except for the fundamental supermode, which is confined in the main array, other high order supermodes penetrating
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Strong dependence of air stability on thickness in n-doped carbon nanotube thermoelectrics Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-14 Bernhard Dörling, Angus Hawkey, Jana Zaumseil, Mariano Campoy-Quiles
We demonstrate that the observed (in-)stability of n-doped carbon nanotube films in air not only depends on the employed dopant but is also strongly affected by sample-specific factors, such as the film thickness and density. We show this for two typical dopants, polyethylenimine and a potassium crown ether complex, by preparing films of increasing thickness. We argue that reports on dopant stability
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Magnetic monopole free motion in two-dimensional artificial spin ice Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-14 D. G. Duarte, L. B. de Oliveira, F. S. Nascimento, W. A. Moura-Melo, A. R. Pereira, C. I. L. de Araujo
Magnetic monopole motion (without its partner in a pair) as a function of external magnetic fields is presented as a fingerprint of freedom of these emergent quasi-particles in a two-dimensional artificial spin ice material. Such freedom, required, for example, for further application in magnetricity, is only possible due to ground-state degeneracy, which causes an anisotropic string energy reduction
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Field-free control and switching of perpendicular magnetization by voltage induced manipulation of RKKY interaction Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-12 Bao Xuan Tran, Jae-Hyun Ha, Won-Chang Choi, Seongsoo Yoon, Tae-Hwan Kim, Jung-Il Hong
Voltage control of magnetization offers substantial advantages in energy efficiency for the development of spintronics technology. However, achieving a complete 180° magnetization switching remains as a challenging task since the electric field cannot provide torques to turn the magnetic moment in the ferromagnetic material. To address this challenge, we explore the utilization of synthetic antiferromagnetic
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Magnonic notch filter based on spin wave caustic beams Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-12 Mitchell S. Swyt, Lia Compton, Arturo Reyes-Almanza, César L. Ordóñez Romero, Giuseppe Pirruccio, H. J. Jason Liu, Kristen S. Buchanan
Here, we study a magnonic crystal made of low-damping yttrium iron garnet that utilizes pseudo-caustic spin wave beams generated from subwavelength square well features arranged in a two-dimensional array. The lattice symmetry and the angle between the caustic beam propagation direction and the applied magnetic field were tailored to optimize the interaction of spin waves with the engineered defects
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Microstructural changes in GaN and AlN under 950 MeV Au swift heavy ion irradiation Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-12 Mahjabin Mahfuz, Farshid Reza, Xingyu Liu, Rongming Chu, Maik Lang, Michael Snure, Xing Wang, Miaomiao Jin
The radiation hardness of GaN-based devices is a critical metric for applications in extreme environments. This study investigates the structural changes in GaN and AlN induced by swift heavy ion (SHI) irradiation, characteristic of space radiation environments. A multilayered GaN/AlN structure is exposed to 950 MeV Au ions at fluences of 1×1012 and 8×1012 ions/cm2. Subsequent post-irradiation characterization
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Acid molecule-assisted high-quality SnO2 transport layer for perovskite solar cells Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-12 Junwei Tan, Guanhua Ren, Wenbin Han, Yanyu Deng, Zhuowei Li, Chunyu Liu, Wenbin Guo
The SnO2 electron transport layer (ETL) serves a critical role in perovskite solar cells. However, the oxygen vacancy defects and excess hydroxyl (–OH) groups in SnO2 always lead to degradation of device performance. Herein, we introduce iminodiacetic acid (IDA) to modify the SnO2 ETL, yielding three key advantages: (1) IDA can neutralize excess –OH groups and passivate the defects in SnO2, diminishing
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Machine-learning-assisted modeling of alloy ordering phenomena at the electronic scale through electronegativity Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-12 Dingqi Zhao, Xi Jin, Junwei Qiao, Yong Zhang, Peter K. Liaw
Many studies attribute the excellent properties of high-entropy alloys to the ordering-phenomena. It can be known from density functional theory that the macroscopic properties of the system can be described by the electron density. Electronegativity is related to electron density, and models describing ordering can be established based on electronegativity scales through machine learning. In this
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High-fidelity correspondence imaging in complex media with varying thresholds and 1-bit compressive sensing Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-12 Zhihan Xu, Qian Song, Wen Chen
Here, we report high-fidelity correspondence imaging (CI) in complex media. By introducing varying thresholds to binarize single-pixel light intensities recorded in complex media, dynamic scaling factors can be eliminated. Then, the binarized light intensities and illumination patterns can be fed into a modified 1-bit compressive sensing algorithm to realize high-fidelity object reconstruction. The
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Dissipative stabilization of high-dimensional GHZ states for neutral atoms Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-12 Yue Zhao, Yu-Qing Yang, Weibin Li, Xiao-Qiang Shao
High-dimensional quantum entanglement characterizes the entanglement of quantum systems within a larger Hilbert space, introducing more intricate and complex correlations among the entangled particles' states. The high-dimensional Greenberger–Horne–Zeilinger (GHZ) state, symbolic of this type of entanglement, is of significant importance in various quantum information processing applications. This
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Chiral photon emission from a chiral–achiral perovskite heterostructure Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-12 Yang Hu, Ruiwen Chen, Saloni Pendse, Takashi Taniguchi, Kenji Watanabe, Jie Jiang, Lifu Zhang, Ru Jia, Edmund F. Palermo, Esther Wertz, Jian Shi
Chiral semiconductors have been recently suggested as the basic building blocks for the design of chiral optoelectronic and electronic devices for chiral emission and spintronics. Herein, we report that through the formation of a chiral/achiral heterostructure, one can develop a chiral system that integrates the merits of both chiral and achiral components for developing a demanded chiral emitter.
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Real-time and calibration-free generalized terahertz time-domain spectroscopic ellipsometry Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-12 Hao Chen, Kaijie Wang, Xuequan Chen, Guangyou Fang
Spectroscopic ellipsometry is a high-precision and powerful optical characterization technique, which can be categorized into two fundamental types of standard and generalized ellipsometry. The latter can obtain the complete Jones matrix to investigate various anisotropic samples. However, terahertz generalized ellipsometry has traditionally relied on frequency-domain instrumentation, which is limited
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Broadband transmissive polarization rotator by gradiently twisted α -MoO3 Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-12 Songyan Hou, Hao Hu, Zhihong Liu, Weichuan Xing, Jincheng Zhang
Polarization engineering has been proven to enhance the capabilities of light manipulation and thus facilitate the development of integrated photonic devices. In this study, we introduce a polarization rotator based on a gradiently twisted α-MoO3 thin film, which works in the mid-infrared range and functions in a transmission mode. To be specific, the proposed device is constructed by gradiently twisted
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Enhanced terahertz high-harmonic generation from high-Q quasi-bound states in the continuum empowered by permittivity-broken metasurface Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-12 Guangcheng Sun, Yue Wang, Zijian Cui, Rongbo Xie, Xiaoguang Zhao
The extraordinary emergence of all-dielectric resonant meta-photonics underpinned by high refractive index and low optical loss materials promises a standout platform for unprecedented manipulation and subwavelength control of light. Recent significant breakthroughs in meta-photonics have to do with the exploration of the non-radiative eigenmodes that lie inside the light cone, called the bound states
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Compressed Hermite–Gaussian differential single-pixel imaging Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-12 Guancheng Huang, Yong Shuai, Yu Ji, Xuyang Zhou, Qi Li, Wei Liu, Bin Gao, Shutian Liu, Zhengjun Liu, Yutong Li
Traditional single-pixel imaging (SPI) encounters challenges such as high sampling redundancy and poor imaging quality, constraining its widespread application. Despite a range of orthogonal modulation modes have been employed in structured illumination to enhance imaging performance, some encoding issues still persist in information sampling, impeding the further progression of SPI. We propose an
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Nonreciprocal magnonic directional coupler based on metal-coated YIG adjacent stripes Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-12 S. A. Odintsov, S. E. Sheshukova, S. A. Nikitov, F. Y. Ogrin, A. V. Sadovnikov
Unidirectional information transport is often realized in magnonic application using the filters, isolators, and circulators. In this Letter, we propose the simple design of the unidirectional magnonic coupler, which is realized as a laterally coupled yttrium–iron–garnet waveguide coated with a metal layer. We experimentally discover and numerically confirm that the proposed structure can exhibit unidirectional
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Continuous variable quantum teleportation network with star topology Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-12 Yimiao Wu, Long Tian, Wenxiu Yao, Shaoping Shi, Xuan Liu, Bo Lu, Yajun Wang, Yaohui Zheng
Quantum network allows communication among more than two users with quantum teleportation and high quantum fidelity enabled by non-classical resources. As one of the most versatile architectures, all users are connected mediated by the central station in the star topology network, leading to the realization of the information interconnection and interoperability. In this work, we experimentally demonstrate
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Electric current driven insulator–metal transition and large electroresistance in single crystal Sr2Ir1–xRuxO4 Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-12 Bin You, Yong Liu, Honggang Zhu, Haowen Wang, Rui Xiong, Chengliang Lu
A series of single crystal Sr2Ir1–xRuxO4 (0 ≤ x ≤ 0.55) have been synthesized, and their physical properties have been investigated. Ru-substitution at Ir-site can drastically reduce the resistivity, which is accompanied by serious suppression of the long range antiferromagnetic order. With the application of electric current, remarkable electroresistance exceeding 90% is obtained at x ∼ 0.2, which
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A re-examination of claims of aminoferrocene–graphene-based molecular magnets Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-12 Gayathri Athavan, François-Xavier Coudert, Robin B. Bedford
A recent investigation claimed that graphene oxide (GO) modified by aminoferrocene gave a material that showed room temperature colossal superparamagnetic behavior. The first step in the reported synthesis of aminoferrocene was the direct nitration of ferrocene. We show here, in accord with previous precedents, that the direct nitration of ferrocene by the nitronium ion does not occur under the conditions
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Optimizing the performance of the thermal transistor based on negative differential thermal resistance Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-12 Tianheng Wu, Yu Yang, Tingting Wang, Xiaozhe Li, Lifa Zhang
Thermal transistors have significant potential in thermal management due to their ability to precisely control the heat fluxes. However, the current design has a limited working temperature range and cannot meet the demand for heat control. In this work, we optimize the performance of a thermal transistor based on negative differential thermal resistance using a modified Lorentz gas model, focusing
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Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-12 Walter Gonçalez Filho, Matteo Borga, Karen Geens, Md Arif Khan, Deepthi Cingu, Urmimala Chatterjee, Anurag Vohra, Stefaan Decoutere, Benoit Bakeroot
This work addresses the impact of the Mg activation anneal step and the resulting acceptor concentration on the channel mobility and VT stability of vertical MOSFETs. Increasing the annealing time with N2 only ambient and the annealing temperature with O2 in the ambient is shown to be effective in increasing the channel acceptor concentration. When the effective acceptor concentration is increased
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High-energy electron injection in top-gated niobium microbridges for enhanced power efficiency and localized control Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-11 Hongmei Du, Zuyu Xu, Ping Zhang, Dingding Li, Zihan Wei, Zixi Wang, Shoucheng Hou, Benwen Chen, Tao Liu, Ruxin Liu, Yang-Yang Lyu, Hancong Sun, Yong-Lei Wang, Huabing Wang, Peiheng Wu
This study explores gate-controlled superconductivity in metallic superconductors by employing a top-gate architecture with a 15 nm monocrystalline h-BN as a gate dielectric. The transport properties under gate voltage can be elucidated by injecting high-energy electrons, following the Fowler–Nordheim electron field emission model. In contrast to conventional resistive Joule heating, high-energy electron
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Quantum cryptography with structured photons Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-11 Andrew Forbes, Mostafa Youssef, Sachleen Singh, Isaac Nape, Bora Ung
Quantum photonic platforms have proven to be essential in realizing fundamentally secure quantum transfer of information, with commercially ready systems already deployed in municipal and terrestrial links. The drive toward higher bit rates and robustness to eavesdropping and noisy channels has focused attention on moving from the present two-dimensional quantum states of polarization, to harnessing
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Enhanced sensitivity of MoS2:Er-based flexible near-infrared photodetectors via tellurium-induced interfacial charge transfer Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-11 Lei Wang, Enhai Song, Xiaohong Ji, Qinyuan Zhang
The persistent photoconductive behavior caused by traps in the active materials usually weakens the sensitivity and stability of photodetectors. Herein, tellurium (Te) microwire and polyvinyl alcohol (PVA) composites were developed as functional flexible substrates to improve the near-infrared (NIR) photoresponse performance of MoS2:Er-based devices with the metal–semiconductor–metal structure. The
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Accumulation and removal of Si impurities on β-Ga2O3 arising from ambient air exposure Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-11 J. P. McCandless, C. A. Gorsak, V. Protasenko, D. G. Schlom, Michael O. Thompson, H. G. Xing, D. Jena, H. P. Nair
Here, we report that a source of Si impurities commonly observed on (010) β-Ga2O3 is from exposure of the surface to air. Moreover, we find that a 15 min hydrofluoric acid (HF) (49%) treatment reduces the Si density by approximately 1 order of magnitude on (010) β-Ga2O3 surfaces. This reduction in Si is critical for the elimination of the often observed parasitic conducting channel, which negatively
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Time-varying coding digital double-layered Huygens' metasurface for high-efficiency harmonic frequency conversion Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-11 Feng Li, Chao Wu, Chunqiao Qiu, Quan Xu, Hongyu Zhu, Quan Li, Zhengren Zhang
Time-varying metasurfaces offer an efficient means of controlling nonlinear harmonics by manipulating component geometries and modulating signals. This ability renders them valuable across various fields, such as wireless communication, radar sensing, and biological monitoring. However, most of the energy in time-varying metasurfaces is concentrated in the fundamental wave, as well as scattered at
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Current transport mechanism of lateral Schottky barrier diodes on β-Ga2O3/SiC structure with atomic level interface Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-11 Wenhui Xu, Zhenghao Shen, Zhenyu Qu, Tiancheng Zhao, Ailun Yi, Tiangui You, Genquan Han, Xin Ou
Heterogeneous integration of β-Ga2O3 on highly thermal conductive SiC substrate by the ion-cutting technique is an effective solution to break the heat-dissipation bottleneck of β-Ga2O3 power electronics. In order to acquire high-quality β-Ga2O3 materials on SiC substrates, it is essential to understand the influence of the ion-cutting process on the current transport in β-Ga2O3 devices and to further
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Focusing of water waves with a shallow-draft cylinder array Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-11 Xinyu Zhao, Xiaodong Sun, Yichen Li, Xinhua Hu, Zhiyuan Che, Lei Shi, Jian Zi
The propagation of water waves can be manipulated via artificial structures. However, such structures usually need to possess a large volume ratio in water, and it may not be easy to build and move them in practical ocean engineering. Here, we theoretically propose and experimentally demonstrate a fixed, shallow-draft cylinder array that can refract and focus water waves within a wide range of wavelengths
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Operation of a Ramsey-CPT microcell atomic clock with driving current-based power modulation of a VCSEL Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-11 C. M. Rivera-Aguilar, M. Callejo, A. Mursa, C. Carlé, R. Vicarini, M. Abdel Hafiz, J.-M. Friedt, N. Passilly, R. Boudot
We report on the operation of a coherent population trapping (CPT) microcell atomic clock using a pulsed Ramsey-like interrogation. The Ramsey-CPT sequence, defined by two-step optical pulses separated by a free-evolution dark time, is produced by switching on and off the output power of a low-power vertical-cavity surface-emitting laser, through direct modulation of its driving current. High-contrast
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Two-dimensional 1T′ α -VXY (X = S, Se, Te; Y = Cl, Br, I): A multifunctional vanadium chalcohalide family with room-temperature ferromagnetism and sliding ferroelectricity Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-11 Junlin Luo, Haiyu Meng, Ruoyan Xu, Xiong-Xiong Xue, Yee Sin Ang
Two-dimensional (2D) ferromagnetic materials with Curie temperature (Tc) above room temperature have great potential ranging from spintronics to information processing and storage. Here, we computationally design a series of 1T′α-VXY (X = S, Se, Te; Y = Cl, Br, I) monolayers with the X and Y atoms arranged alternately in the 2D plane. VXY monolayers are ferromagnetic semiconductors with Tc much higher
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Tracking intrinsic ferroelectric switching under electric field via operando second harmonic generation Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-11 Yangda Dong, Yangchun Tan, Yuan Zhang, Liyufen Dai, Guangtong Yuan, Chuanlai Ren, Zhenghao Liu, Xiangli Zhong, Changjian Li, Jinbin Wang, Gaokuo Zhong, Jiangyu Li
Polarization hysteresis is the defining characteristic of ferroelectrics, though the measurement of ferroelectric hysteresis is often complicated by artifacts such as leakage current and not all materials with apparent electrical hysteresis are ferroelectric. In this Letter, we have set up an operando second harmonic generation (SHG) system to track intrinsic ferroelectric switches under electric field
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Low phase noise microwave oscillator based on gain driven polariton Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-11 Mun Kim, Chunlei Zhang, Chenyang Lu, Can-Ming Hu
Low phase noise oscillators are key building blocks of many high-end microwave systems. This work introduces a phase noise reduction mechanism through a gain driven polariton platform, where coherent coupling is used to suppress frequency distribution around the carrier, effectively reducing the phase noise. The design process for achieving low phase noise performance is outlined, and three prototypes
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Adjustable onset voltages of embedded LiNbO3 domain-wall selectors for large-scale memory integration Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-11 Hao Chen Fan, Bo Wen Shen, Wen Di Zhang, An Quan Jiang
A ferroelectric domain-wall memory has dual functionalities, where the volatile interfacial domain nearby the electrode can function as an embedded selector in contrast to the nonvolatile domain within an inner cell for information storage. However, most of crossbar memories require independent adjustments of the onset voltage of the selector and the coercive voltage of the inner domains at the same
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Effect of temperature on dislocation-tuned dielectricity and piezoelectricity in single-crystal BaTiO3 Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-03-11 Felix Dietrich, Fan Ni, Lovro Fulanović, Xiandong Zhou, Daniel Isaia, Pedro B. Groszewicz, Chunlin Zhang, Bai-Xiang Xu, Jürgen Rödel, Gerd Buntkowsky, Fangping Zhuo
The pinning-controlled mobility of ferroelectric/ferroelastic domain walls is an important part of managing polarization switching and determining the final properties of ferroelectric and piezoelectric materials. Here, we assess the impact of temperature on dislocation-induced domain wall pinning as well as on dislocation-tuned dielectric and piezoelectric response in barium titanate single crystals