1. Yingtao Li*, Xiaoyan Li, Rongbo Chen, Hong Wang, and Xiaoping Gao, “Effect of Interface Layer Engineering on Resistive Switching Characteristics of ZrO2-Based Resistive Switching Devices”, IEEE Transactions on Electron Devices, 65, 5390-5394, 2018. 2. Na Bai, Min Xu, Cong Hu, Yaodong Ma, Qi Wang, Deyan He, Jing Qi, Yingtao Li* , “Resistive switching behaviors mediated by grain boundaries in one longitudinal Al/MoS2&PVP/ITO device”, Materials Science in Semiconductor Processing, 91, 246–251, 2019. 3. Yingtao Li*, Yang Wang, Chuanbing Chen, Peng Yuan, and Xiaoping Gao, “Research on feasibility of using a Transient Voltage Suppressor as the selection device for bipolar RRAM”, Microelectronic Engineering, 164, 20–22, 2016. 4. Yingtao Li*, Rongrong Li, Liping Fu, Xiaoping Gao, Yang Wang, and Chunlan Tao, “Excellent nonlinearity of a selection device based on anti-series connected Zener diodes for ultrahigh-density bipolar RRAM arrays”, Nanotechnology, 26, 425201, 2015. 5. Yingtao Li*, Peng Yuan, Liping Fu, Rongrong Li, Xiaoping Gao, and Chunlan Tao, “Coexistence of diode-like volatile and multilevel nonvolatile resistive switching in a ZrO2/TiO2 stack structure”, Nanotechnology, 26, 391001, 2015. 6. Yingtao Li*, Xiaoping Gao, Liping Fu, Peng Yuan, Hong Wang, and Chunlan Tao, “Improvement of resistive switching fluctuations by using one step lift-off process”, Phys. Status Solidi RRL, 9, 594-596, 2015. 7. Yingtao Li*, Rongrong Li, Peng Yuan, Xiaoping Gao, and Enzi Chen, “Low-cost bidirectional selector based on Ti/TiO2/HfO2/TiO2/Ti stack for bipolar RRAM arrays”, Modern Physics Letters B, 29, 1550244, 2015. 8. Yingtao Li*, Qingchun Gong, Rongrong Li, and Xinyu Jiang, “A new bipolar RRAM selector based on anti-parallel connected diodes for crossbar applications”, Nanotechnology, 25,185201, 2014（Research Highlight）. 9. Yingtao Li*, Qingchun Gong, and Xinyu Jiang, “Feasibility of Schottky diode as selector for bipolar-type resistive random access memory applications”, Applied Physics Letters, 104, 132105, 2014. 10. Yingtao Li*, Liping Fu, Chunlan Tao, Xinyu Jiang, and Pengxiao Sun, “Feasibility study of using a Zener diode as the selection device for bipolar RRAM and WORM memory arrays”, Journal of Physics D: Applied Physics, 47, 025103, 2014. 11. Yingtao Li*, Xiaoyi Hu, Rongrong Li, Enzi Chen, Qingchun Gong, and Chunlan Tao, “Oxide based two diodes-one resistor structure for bipolar RRAM crossbar array”, Microelectronic Engineering, 130, 35-39, 2014. 12. Yingtao Li*, Xinyu Jiang, and Chunlan Tao, “A self-rectifying bipolar RRAM device based on Ni/HfO2/n+-Si structure”, Modern Physics Letters B, 28, 1450030, 2014. 13. Jinfu Ma*, Shenghua Yuan, Shaolin Yang, Hui Lu, Yingtao Li*, “Poly(3,4-ethylenedioxythiophene)/reduced graphene oxide composites as counter electrodes for high efficiency dye-sensitized solar cells”, Applied Surface Science, 440, 8–15, 2018. 14. Liping Fu, Yingtao Li*, Genliang Han，Xiaoping Gao, Chuanbing Chen, and Peng Yuan, “Stable resistive switching characteristics of ZrO2-based memory device with low-cost”, Microelectronic Engineering, 172, 26–29, 2017. 15. Xiangyu Gao, Jinfu Ma*, Yingtao Li*, Haicheng Wei, “Graphene quantum dots doped PEDOT and its electrocatalytic performance for oxygen reduction reaction”, International Journal of Electrochemical science, 12, 11287–11297, 2017. 16. Xiaoping Gao, Liping Fu, Chuanbing Chen, Peng Yuan, and Yingtao Li*, “Self-compliance multilevel storage characteristic in HfO2-based device”, Chinese Physics B, 25 (10), 106102, 2016. 17. Yingtao Li, Hangbing Lv, Qi Liu, Shibing Long, Ming Wang, Hongwei Xie, Kangwei Zhang, Zongliang Huo, and Ming Liu*, “Bipolar one diode–one resistor integration for high-density resistive memory applications”, Nanoscale, 5, 4785–4789, 2013. 18. Yingtao Li, Shibing Long, Hangbing Lv, Qi Liu, Ming Wang, Hongwei Xie, Kangwei Zhang, Xiaoyi Yang, and Ming Liu*, “Novel self-compliance bipolar 1D1R memory device for high-density RRAM application”, International Memory Workshop (IMW), May 26-29, 2013, Monterey, CA. 19. Yingtao Li, Shibing Long, Hangbing Lv, Qi Liu, Wei Wang, Qin Wang, Zongliang Huo, Yan Wang, Sen Zhang, Su Liu, and Ming Liu*, “Reset Instability in Cu/ZrO2:Cu/Pt RRAM Device”, IEEE Electron Devices Lett., 32 (3), 363-365, 2011.