李秀妍 - 上海交通大学 - 微纳电子学系

个人简介

分别于2009、2012年于华东师范大学、同济大学物理系取得学士、硕士学位，2015年于日本东京大学取得工学博士学位，之后在美国罗格斯大学从事博士后研究工作。现任上海交通大学微纳电子学系长聘教轨副教授，博士生导师。长期从事半导体材料与器件的相关研究。研究方向涉及高迁移率小尺寸MOS器件、新型逻辑运算和存储器件（负电容晶体管、铁电存储器等）、以及高功率宽禁带半导体器件的基础物理研究和器件制备。迄今为止以第一作者在知名学术期刊发表论文十余篇,在知名国际学术会议口头报告成果近二十次（包括微电子器件顶级会议IEDM两次），获得美国日本等学术相关奖励六项。

研究领域

1 基于SiGe半导体等的高迁移率小尺寸MOS器件2. 基于铁电薄膜的负电容晶体管、铁电存储器等新型逻辑运算和存储器件3. 基于宽禁带半导体SiC和Ga2O3的高功率MOS器件

近期论文

查看导师最新文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

X. Li, and A. Toriumi “Self-decomposition of SiO2 due to Si-chemical potential increase in SiO2 between HfO2 and substrate”, International Electron Device Meeting (IEDM) Tech. Dig., (IEEE, 2015), 21.4. X. Li, T. Yajima, T. Nishimura, K. Nagashio and A. Toriumi, “Analytical Formulation of SiO2-IL Scavenging in HfO2/SiO2/Si Gate Stacks: A Key is the SiO2/Si Interface Reaction.” International Electron Device Meeting (IEDM) Tech. Dig., (IEEE, 2014), 21.2. X. Li*, A. Ermakov, V. Amarasinghe, T. Gustafsson, E. Garfunkel and L. C Feldman, “Oxidation induced stress in SiO2/SiC structure”, Applied Physics Letter, 110, (2017)141604. X. Li*, T. Yajima, T. Nishimura, K. Nagashio and A. Toriumi, “Thermodynamic understanding and analytical modeling of interfacial SiO2 scavenging in HfO2 gate stacks on Si, SiC and SiGe”, Applied Physics Letter, 110, (2017)142903. X. Li*, T. Nishimura and A. Toriumi, “Interfacial SiO2 scavenging kinetics in HfO2 gate stacks”, Applied Physics Letter, 109, (2016)202905. X. Li*, T. Yajima, T. Nishimura, K. Nagashio and A. Toriumi, “Effect of Si Substrate on Interfacial SiO2 Scavenging in HfO2/SiO2/Si Stacks.” Applied Physics Letter, 105, (2014) 182902. X.Li, Y. Noma, W. Song, T. Nishimura and A. Toriumi, “Impact of “struggle for oxygen” at oxidized interface on SiGe gate stacks”, 2018 International Conference on Solid State Devices and Materials (SSDM), Sep 9-13th, 2018, Tokyo, Japan X.Li, T. Nishimura and A. Toriumi, “Direct measurement of internal potential in ferroelectric/paraelectric stack for studying Negative Capacitance effects”, 2018 International Conference on Solid State Devices and Materials (SSDM), Sep 9-13th, 2018, Tokyo, Japan X. Li, S. S. Lee, A. Ermakov, V. Amarasinghe, J. Medina Ramos, E. Garfunkel, T. Gustafsson, P. Fenter and L. C. Feldman, “The SiO2/4H-SiC interfaces: Physical stress, material density and carbon retention”, 2017 Material Research Society (MRS) fall meeting, Nov 26th-Dec. 1st, 2017, Boston, USA X. Li, A. Ermakov, V. Amarasinghe, T. Gustafsson, L. C Feldman and E. Garfunkel, “In-situ study of stress formation and relaxation during thermal oxidation of SiC”, 2017 International Conference on Silicon Carbide Related Materials (ICSCRM), Sep 17th-22nd, 2017, Washington DC, USA Highlight Talk in ICSCRM X. Li, A. Ermakov, V. Amarasinghe, T. Gustafsson, L. C Feldman and E. Garfunkel, “Oxidation induced stress in SiO2/SiC system”, 2016 International Conference on Solid State Devices and Materials (SSDM), Sep 26-29th, 2016, Tsukuba, Japan (Invited) A. Toriumi and X. Li, “Scavenging Kinetics of Interfacial SiO2 in HfO2/SiO2/Si Gate Stacks”, 228th ECS Meeting, Oct. 13, 2015, Phoenix. AZ, USA X. Li, T. Yajima, T. Nishimura and A. Toriumi, “The critical role of Si chemical potential in SiO2 scavenging in HfO2 gate stacks”, The 76th Autumn Japanese Society of Applied Physics (JSAP), Sep. 13-16th, 2015, Nagoya, Japan. Young paper award in JSAP