黄巍 - 厦门大学 - 物理科学与技术学院

个人简介

黄巍，2008年毕业于上海复旦大学微电子系，获理学博士学位，同年到韩国高丽大学电子系参加博士后工作。2009年7月加入厦门大学物理系，任助理教授。

研究领域

目前的研究方向是与锗相关的电子及光电子器件。

近期论文

查看导师最新文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

1．Wei Huang, Guo-Ping Ru, C. Detavernier, R. L. Van Meirhaeghe, Yu-Long Jiang, Xin-Ping Qu, Bing-Zong Li, Yttrium silicide formation and its contact properties on Si(100). Microelectronics Engineering, 85, 131 (2008). 2．Wei Huang, Guo-Ping Ru, C. Detavernier, R. L. Van Meirhaeghe, Yu-Long Jiang, Xin-Ping Qu, Bing-Zong Li, Effect of Pt addition on the stress of NiSi film formed on Si(100), Chinese Journal of Semiconductors, 28, 635 (2007). 3．W. Huang, G.P. Ru, Y.L. Jiang, X.P. Qu, B.Z. Li, R. Liu, Improvement of Er-silicide formation on Si(100) by W capping. Thin Solid Films, 516, 4252 (2008). 4．W. Huang, G.P. Ru, X.P. Qu, Y.L. Jiang, B.Z. Li, Erbium silicide formation and its contact properties on Si(100). Journal of Vacuum Science and Technology B, 26, 164 (2008). 5．W. Huang, Y.L. Min, G.P. Ru, X.P. Qu, Y.L. Jiang, B.Z. Li, Effect of erbium interlayer on nickel silicide formation on Si(100). Applied Surface Science, 254, 2120 (2008). 6．Yu-Long Jiang, Guo-Ping Ru, Wei Huang, Xin-Ping Qu, Bing-Zong Li, Aditya Agarwal, Gary Cai, John Poate, Christophe Detavernier, R L Van Meirhaeghe, Electrical characterization of NiSi/Si interfaces formed by a single and a two-step rapid thermal silicidation, Semiconductor Science and Technology. 20, 716 (2005).