李成 - 厦门大学 - 物理科学与技术学院

个人简介

教育经历 1997／8－2000／7 中国科学院半导体研究所集成光电国家重点实验室，博士， 1992.8－1995.7 兰州大学物理系，硕士 1988.8－1992.7兰州大学物理系，学士工作经历 2007／8----- 至今厦门大学物理科学与技主学院物理学系教授/博导 2004／4－2007／8 厦门大学物理与机电工程学院物理系副教授 2002／3－2004／3 日本筑波大学物理工学系，助手 2000／7－2002／1 中国科学院半导体研究所，博士后 1995／7－1997／8 西安微电子技术研究所，助理工程师

研究领域

硅基集成光电子材料与器件，IV族材料MBE外延，硅基发光器件，光电探测器，新型二维材料

近期论文

查看导师新发文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

1.Zhiwei Huang, Chunyu Yu, Ailing Chang, Yimo Zhao, Wei Huang, Songyan Chen, and Cheng Li,* High-k dielectric interlayered ITO/germanium Schottky photodiodes with low dark current and high photoconductive gain， 2020, J Mater Sci，https://doi.org/10.1007/s10853-020-04625-3. 2.Guangyang, Lin, Dongxue Liang,Chunu Yu, Haiyang Hong, Yicheng Mao, Cheng Li,* and Songyan Chen，Broadband 400-2400 nm Ge heterostructure nanowire photodetector fabricated bythree-dimensional Ge condensation technique，Optics Express Vol. 27, No. 22， 32802 3.Lu Zhang1, Haiyang Hong1, Cheng Li1*, Songyan Chen1, Wei Huang1, Jianyuan Wang1, and Hao Wang，High-Sn fraction GeSn quantum dots for Si-based light source at 1.55 μm，Applied Physics Express 12, 055504 (2019) 4.Guangyang Lin, Xiaohui Yi, Cheng Li,a) Ningli Chen, Lu Zhang, Songyan Chen, Wei Huang, Jianyuan Wang, Xihuan Xiong, and Jiaming Sun，Strong room temperature electroluminescence from lateral p-SiGe/i-Ge/n-SiGe heterojunction diodes on silicon-on-insulator substrate，Appl. Phys. Lett. 109, 141104 (2016). 5.Guangyang Lin, Chen Wang, Cheng Li, Chaowen Chen, Zhiwei Huang, Wei Huang, Songyan Chen, Hongkai Lai , Chunyan Jin, and Jiaming Sun Strong electroluminescence from direct band and defects in Ge n+/p shallow junctions at room temperature，Appl. Phys. Lett. 108, 191107 (2016). 6.Zhiwei Huang, Cheng Li*, Guangyang Lin, Shumei Lai, Chen Wang, Wei Huang, Jianyuan Wang, and Songyan Chen, Suppressing the formation of GeOx by doping Sn into Ge to modulate the Schottky barrier height of metal/n-Ge contact， Appl. Phys. Express 9, 021301 (2016). 7.Qihai Lu, RongHuang, Xiaoling Lan, Xiaowei Chi, Chao Lu, Cheng Li,Zhiguo Wu, JunLi, Genliang Han, Pengxun Yan, Amazing diffusion depth of ultra- thin hafnium oxide film grown on n-type silicon by lower temperature atomic layer deposition, Materials Letters 169(2016)164–167 8.Chen Wang, Cheng Li, Guangyang Lin, Weifang Lu, Jiangbin Wei, Wei Huang, Hongkai Lai, Germanium n+/p Shallow Junction With Record Rectification Ratio Formed by Low-Temperature Preannealing and Excimer Laser Annealing IEEE Trans. On Electron Devices VOL. 61, NO. 9, SEPTEMBER 2014。 9.Guangyang Lin, Mengrao Tang, Cheng Li,a) Shihao Huang, Weifang Lu, Chen Wang,Guangming Yan, and Songyan Chen，Formation of nickel germanide on SiO2-capped n-Ge to lower its Schottky barrier height，Appl. Phys. Lett. 103, 253506 (2013)。