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1. Han DeDong, Wang Yi, Zhang ShengDong, Sun Lei, Kang Jinfeng, Liu XiaoYan, Du Gang, Liu LiFeng, and Han RuQi “Fabrication and Characteristics of ZnO MOS Capacitors with High-K HfO2 Gate Dielectrics”, Science China E, 2010, Vol.53 No.9: p.2333-2336
2. Han DeDong, Wang Yi, Zhang ShengDong, Sun Lei, Han RuQi, “Comparative study on fabrication methods of ZnO thin films”, European Materials Research Society (E-MRS) 2010 fall meeting, Poland.
3. Dedong Han, Wei Wang, Jian Cai, Liangliang Wang, Yicheng Ren, Yi Wang and Shengdong Zhang, Flexible thin-film transistors fabricated on plastic substrate at room temperature, European Materials Research Society (E-MRS) 2012 spring meeting, France.
4. Han DeDong, Wang Yi, Zhang ShengDong, Sun Lei, Han RuQi, “Annealing Effect on characteristics of ZnO-based thin-film transistors”, European Materials Research Society (E-MRS) 2010 fall meeting, Poland.
5. Dedong Han, Jian Cai, Wei Wang, Liangliang Wang, Yicheng Ren, Shaojuan Li, Yi Wang, and Shengdong Zhang, High performance ZnO-based thin film transistor with high-κ gate dielectrics fabricated at low temperature. TechConnectWorld2012,U.S.A.
6. Han DeDong, Wang Yi, Zhang ShengDong, Sun Lei, Han RuQi, Satoru Matsumoto, and Yuji Ino, “Fabrication and characteristics of ZnO thin films deposited by RF sputtering on plastic substrates for flexible display”, Science China F, 2012, 55(6), p1441-1445
7. Han DeDong, Wang Yi, Zhang ShengDong, Sun Lei, Han RuQi, Satoru Matsumoto, and Yuji Ino, “Influence of sputtering power on properties of ZnO thin films fabricated by RF sputtering in room temperature”，Science China F, 2012, 55(4): 951-955
8. Dedong Han, Jian Cai, Wei Wang, Liangliang Wang, Yi Wang and Shendong Zhang, “High performance Aluminum-doped ZnO thin film transistors with high-K gate dielectrics fabricated at low temperature”, European Materials Research Society (E-MRS) 2012 spring meeting, France.
9. Han D.D., Kang J.F., Liu X.Y., Sun L., Luo H., and Han R.Q., “Fabrication and characteristics of high-K HfO2gate dielectrics on n- germanium”. Chin. Phys., 2007. 16(1): p. 245-248
10. Han D.D., Wang Y., Tian D.Y., Wang W., Liu X.Y., Kang J.F., and Han R.Q., “Studies of Ti- and Ni-germanide Schottky contacts on n-Ge(100) substrates”. Microelectron.Eng., 2005. 82(2): p. 93-98.
11. Han D.D., Liu X.Y., Kang J.F., Xia Z.L., Du G., and Han R.Q., “Fabrication and characteristics of Ni-germanide Schottky contacts with Ge”. Chin. Phys., 2005. 14(5): p. 1041-1043.
12. Han D.D., Kang J.F., Lin C.H., and Han R.Q., “Reliability characteristics of high-K gate dielectrics HfO2inmetal-oxide semiconductor capacitors”. Microelectron.Eng., 2003. 66(1-4): p. 643-647.
13. Han D.D., Kang J.F., Lin C.H., and Han R.Q., “Annealing characteristics of ultra-thin high-K HfO2 gate dielectrics”. Chin. Phys., 2003. 12(3): p. 325-327.
14. Yicheng Ren, Dedong Han, Yi Wang，Performance of Asynchronous Double-gate Poly-Si Thin-film Transistors, China Display/Asia Display 2011, pp. 552-555
15. Yicheng Ren, Dedong Han, Lei Sun，Gang Du, Shengdong Zhang. Xiaoyan Liu, Yi Wang， Effects of non-uniform grains distribution of the intrinsic n-channel polycrystalline silicon TFTs, Electron Device and Solid-State Circuits 2011, 41
16. Han DeDong, Wang Yi, Zhang ShengDong, Sun Lei, Kang Jinfeng, Liu Xiaoyan, Du Gang, Liu Lifeng, and Han Ruqi, “Fabrication and characteristics of ZnO-based thin film transistors”, ICSICT 2008 - 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008, p 982-984, 93
17. Sun Bing, Liu Li-Feng, Han De-Dong, Wang Yi, Liu Xiao-Yan, Han Ru-Qi, and Kang Jin-Feng, “Improved resistive switching characteristics of Ag-doped ZrO2 films fabricated by sol-gel process”, Chinese Physics Letters, June 2008, vol. 25, (no. 6), pp.2187-2189.
18. B. Sun, L. F. Liu, Y. Wang, D. D. Han, X. Y. Liu, R. Q. Han, and J. F. Kang, “Bipolar Resistive Switching Behaviors of Ag/Si3N4/Pt Memory Device”, The 9th International Conference on Solid State and Integrated Circuit Technology, October 2008, pp.925-927
19. Xu N, Liu LF, Sun X, Liu XY, Han, DD, et al, Characteristics and mechanism of conduction/set process in TiN/ZnO/Pt resistance switching random-access memories, APPLIED PHYSICS LETTERS, 2008, 92(23): 232112
20. Han D.D., Kang J.F., Liu X.Y., Han R.Q., “Electrical and Reliability Characteristics of High-K HfO2 Gate Dielectrics”, 201st Meeting of The Electrochemical Society，2002，5
21. Han D.D., Liu X.Y., Kang J.F., Xia Z.L., Du G., Han R.Q., Ni Germanide Schottky Contact with Ge, Electrochemical Society International Semiconductor Technology Conference (ISTC)2004, 9
22. Jian Cai, Dedong Han, Wei Wang, Liangliang Wang, Yi Wang and Shendong Zhang, “High performance RF sputtering deposited AZO thin-film transistors after a post-annealing process”, The International Workshop on Engineering Technology and Engineering Management, 2012
23. Wei Wang, Dedong Han, Jian Cai1, Youfeng Geng, Liangliang Wang, Yicheng Ren, Hao Deng, Yi Wang and Shengdong Zhang, “Al-doped ZnO Thin-Film Transistors on Flexible Plastic Substrate”, The Nineteenth International Workshop on Active-matrix Flatpanel Displays and Devices, 2012, 7,Japan
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