张文峰 - 华中科技大学 - 材料科学与工程学院

个人简介

教育经历 1999 年 9 月 - 2003 年 7 月，就读于西南交通大学，完成本科学业，获得学士学位，本科毕业。 2003 年 9 月 - 2006 年 4 月，在北京科技大学攻读研究生，获得硕士学位，研究生（硕士）毕业。 2006 年 9 月 - 2009 年 10 月，于香港城市大学深造，获得博士学位，研究生（博士）毕业。工作经历 2014 年 9 月 - 2020 年 10 月，担任华中科技大学材料学院电子封装与连接中心副教授。 2020 年 11 月 - 至今，担任华中科技大学材料学院电子封装与连接中心教授。

研究领域

集成电路电子制造

近期论文

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[1] Li Yang#, Wenfeng Zhang#, *, Jie Li, Shuai Cheng, Zijian Xie, and Haixin Chang*, Tellurization Velocity-Dependent Metallic-Semiconducting-Metallic Phase Evolution in Chemical Vapor Deposition Growth of Large-Area, Few-Layer MoTe2, ACS Nano, 2017,11(2): 1964-1972. [2] Li Yang#, Hao Wu#, Wenfeng Zhang,* Zhenhua Chen, Jie Li, Xun Lou, Zijian Xie, Rui Zhu and Haixin Chang*, Anomalous oxidation and its effect on electrical transport originating from surface chemical instability in large-area, few-layer 1T '-MoTe2 films, Nanoscale, 2018, 10(42),19906-19915. [3] Li Yang, Hao Wu, Wenfeng Zhang,* Xun Lou, Zijian Xie, Xu Yu, Yuan Liu, and Haixin Chang*,Ta Doping Enhanced Room-Temperature Ferromagnetism in 2D Semiconducting MoTe2 Nanosheet, Adv. Electron. Mater., 2019, 1900552. [4] Li Yang, Hao Wu, Liang Zhang, Wenfeng Zhang,* Luying Li, Tappei Kawakami, Katsuaki Sugawara, Takafumi Sato, Gaojie Zhang, Pengfei Gao, Younis, Muhammad, Xiaokun Wen, Boran Tao, Fei Guo and Haixin Chang*,Highly Tunable Near-Room Temperature Ferromagnetism in Cr-Doped Layered Td-WTe2, Adv. Funct. Mater., 2021, 31(13): 2008116. [5] Zijian Xie, Wenyu Lei, Wenfeng Zhang,* Yuan Liu, Li Yang, Xiaokun Wen, and Haixin Chang, High-Performance Large-Scale Vertical 1T'/2H Homojunction CVD-Grown Polycrystalline MoTe2 Transistors, Adv. Mater. Interface, 2021, 8(10): 2002023. [6] Xu Yu, Xiaokun Wen, Wenfeng Zhang,* Li Yang, Hao Wu, Xun Lou, Zijian Xie, Yuan Liu, and Haixin Chang, Fast and controlled growth of two-dimensional layered ZrTe3 nanoribbons by chemical vapor deposition, CrystEngComm, 2019, 21, 5586-5594. [7] Xun Lou, Wenfeng Zhang,* Zijian Xie, Li Yang, Xu Yu, Yuan Liu, and Haixin Chang, Solution-processed high-k dielectrics for improving the performance of flexible intrinsic Ge nanowire transistors: Dielectrics screening, interface engineering and electrical properties, J. Phys. D: Appl. Phys., 52 (2019) 505103. [8] Wenfeng Zhang#, *, Tomonori Nishimura, and Akira Toriumi, Impact of GeO2 passivation layer quality on band alignment at GeO2/Ge interface studied by internal photoemission spectroscopy, Appl. Phys. Express, 2016, 9: 024201. [9] Zhang Wenfeng#, *, Lou Xun, Xie Zijian, Chang Haixin, Band bending analysis of charge characteristics at GeO2/Ge interface by x-ray photoemission spectroscopy, J. Phys. D: Appl. Phys., 2019.1.23, 52(4): 045101. [10] Yoshikazu Ito#, Wenfeng Zhang#, Jinhua Li, Haixin Chang*, Pan Liu, Takeshi Fujita, Yongwen Tan, Feng Yan and Mingwei Chen*, 3D Bicontinuous Nanoporous Reduced Graphene Oxide for Highly Sensitive Photodetectors, Adv. Funct. Mater., 2016, 26(8): 1271-1277.