Mol, Jan - University of Oxford - Department of Materials

研究领域

My research is focussed on understanding quantum phenomena in atomic- and molecular-scale electronic devices. Recent advances in nanofabrication now make it possible to measure the quantum properties of individual atoms and molecules. The aim of my research is to harness quantum phenomena in single atoms an molecules for real-world applications. Integrated circuits where each functional unit is formed by only a single molecule will be the ultimate form of electronic device scaling. I measure charge transport through individual molecules in reproducible graphene-molecule-graphene transistors that operate up to room temperature. Dopant atoms in semiconductors form a natural confinement potential for electrons or holes. I study the quantum mechanical properties of individual donor and acceptor atoms embedded in state-of-the-art nanoscale silicon transistors. This research focusses on the manipulation and read-out of spin- and charge-states of single dopant atoms.

近期论文

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Y. Li, J.A. Mol, S.C. Benjamin G.A.D. Briggs, Interferecne-based molecular transistors. Sci. Rep. just accpeted (2016) P. Gehring, H. Sadeghi, S. Sangtarash, C.S. Lau, J. Liu, A. Ardavan, J.H. Warner, C.J. Lambert, G.A.D. Briggs, and J.A. Mol, Quantum Interference in Graphene Nanoconstrictions. Nano Lett. 16(7), 4210 (2016) J. Salfi, J.A. Mol, R. Rahman, G. Klimeck, M.Y. Simmons, L.C.L. Hollenberg, and S. Rogge, Quantum simulation of the Hubbard model with dopant atoms in silicon. Nature Comm. 7:11342 (2016) J. Salfi, J.A. Mol, D. Culcer, and S. Rogge, Charge-Insensitive Single-Atom Spin-Orbit Qubit in Silicon. Phys. Rev. Lett. 116, 246801 (2016) C.S. Lau, H. Sadeghi, G. Rogers, S. Sangtarash, P. Dallas, K. Porfyrakis, J.H. Warner, C.J. Lambert, G.A.D. Briggs, and J.A. Mol, Redox-dependent Franck-Condon blockade and avalanche transport in a graphene-fullerene single-molecule transistor. Nano Lett. 16(1), 170 (2016) P. Puczkarski, P. Gehring, C.S. Lau, J. Liu, A. Ardavan, J.H. Warner, G.A.D. Briggs, and J.A. Mol, Three-terminal graphene single-electron transistor fabricated using feedback-controlled electroburning. Appl. Phys. Lett. 107, 133105 (2015) J.A. Mol, C.S. Lau, W.J.M. Lewis, H. Sadeghi, C. Roche, A. Cnossen, J.H. Warner, C.J. Lambert, H.L. Anderson, and G.A.D. Briggs, Graphene-porphyrin single-molecule transistors, Nanoscale 7. 13181 (2015) J.A. Mol, J. Salfi, R. Rahman, Y. Hsueh, J.A. Miwa, G. Klimeck, M.Y. Simmons, and S. Rogge, Interface-induced heavy-hole/light-hole splitting of acceptors in silicon. Appl. Phys Lett. 106, 203110 (2015) H. Sadeghi, J.A. Mol, C.S. Lau, G.A.D. Briggs, J. Warner, and C.J. Lambert, Conductance enlargement in picoscale electroburnt graphene nanojunctions. Proc. Natl. Acad. Sci. 112, 2658 (2015) C.S. Lau, J.A. Mol, J.H. Warner and G.A.D. Briggs, Nanoscale control of graphene electrodes. Phys. Chem. Chem. Phys. 16 20398 (2014) J. Salfi, J.A. Mol, R. Rahman, G. Klimeck, M.Y. Simmons, L.C.L. Hollenberg and S. Rogge, Spatially resolving valley quantum interference of a donor in silicon. Nature Mater. 13, 605 (2014) J. van der Heijden, J. Salfi, J.A. Mol, J. Verduijn, G.C. Tettamanzi, A.R. Hamilton, N. Collaert, S. Rogge, Probing the spin states of a single acceptor atom. Nano Lett. 14(3), 1492 (2014) J. Zemen, J. Mašek, J. Ku?era, J. A. Mol, P. Motloch, T. Jungwirth, Comparative study of tight-binding and ab initio electronic structure calculations focused on magnetic anisotropy in ordered CoPt alloy. J. of Magn. Magn. Mater. 356, 87 (2014)