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Enhanced Thermoelectric Performance of n-Type Polycrystalline SnSe via MoCl5 Doping

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Abstract

n-Type polycrystalline SnSe0.95-x%MoCl5 (x = 0.5, 1.0, 1.5, 2) samples have been synthesized by melting and hot-pressing. The effect of MoCl5 doping on thermoelectric properties is investigated. The multipoint defects of Clse and Mosn increased the carrier concentration from 5.3 × 1017 cm−3 (p-type) in undoped SnSe to 1.76 × 1019 cm−3 (n-type) in SnSe0.95-1.5%MoCl5 sample, which leads to increased electrical conductivity. Moreover, the multipoint defects enhanced the phonon scattering and resulted in a suppression of the thermal conductivity. As a result, a peak value ZT of 0.66 was obtained at 773 K for SnSe0.95-1%MoCl5. These results show that MoCl5 could be an effective dopant for improving the thermoelectric performance of n-type SnSe.

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Acknowledgments

This work was sponsored by the Zhejiang Provincial Natural Science Foundation of China (Grant No. LY19E020009).

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Authors and Affiliations

  1. Department of Physics, Zhejiang Normal University, Jinhua, 321004, People’s Republic of China

    Tong Shen, Kang Yin Li, Zi Jie Chen & Jian Xiao Si

  2. Department of Physics, Shaoxing University, Shaoxing, 312000, People’s Republic of China

    Hai Fei Wu

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  1. Tong Shen
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  2. Kang Yin Li
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  3. Zi Jie Chen
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  5. Jian Xiao Si
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Correspondence to Jian Xiao Si.

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Shen, T., Li, K.Y., Chen, Z.J. et al. Enhanced Thermoelectric Performance of n-Type Polycrystalline SnSe via MoCl5 Doping. J. Electron. Mater. 49, 621–626 (2020). https://doi.org/10.1007/s11664-019-07795-2

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