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Investigation of Quaternary Barrier InAlGaN/GaN/AlGaN Double-Heterojunction High-Electron-Mobility Transistors (HEMTs) for High-Speed and High-Power Applications

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Abstract

We report direct current (DC) and microwave performance of a 50-nm gate length (Lg) quaternary-based InAlGaN/GaN/AlGaN high-electron-mobility transistor (HEMT) on SiC substrate with SiN passivation and by using a T-gate. The proposed HEMT structure is simulated using industry-standard Synopsys Sentaurus technology computer-aided design (TCAD). The regrown n++ GaN source/drain ohmic contacts show a peak drain current density (Idmax) of 2.9 A/mm along with low on-resistance of 0.49 Ω mm. A record power gain cut-off frequency (fmax) of 425 GHz along with current gain cut-off frequency (ft) of 310 GHz are obtained by the substantial reduction in the device's intrinsic and extrinsic parasitic resistances and capacitances. A very thin 7-nm In0.13Al0.83Ga0.04N quaternary barrier with an AlGaN back-barrier structure effectively mitigates the short-channel effect with an improved breakdown voltage (VBR) of 38 V. The prominent DC and microwave characteristics of the proposed HEMT make it an appropriate candidate for next-generation high-power millimeter-wave electronics.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Anil Neerukonda Institute of Technology & Sciences, Visakhapatnam, India

    P. Murugapandiyan & V. Rajya Lakshmi

  2. Department of Electronics and Communication Engineering, Karpagam College of Engineering, Coimbatore, India

    A. Mohanbabu

  3. Department of Electronics and Communication Engineering, Lovely Professional University, Jalandhar, India

    Mohammed Wasim

  4. Faculty of Graduate Studies and Research, Botho University, Gaborone, Botswana

    K. Meenakshi Sundaram

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  1. P. Murugapandiyan
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Correspondence to P. Murugapandiyan.

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Murugapandiyan, P., Mohanbabu, A., Lakshmi, V.R. et al. Investigation of Quaternary Barrier InAlGaN/GaN/AlGaN Double-Heterojunction High-Electron-Mobility Transistors (HEMTs) for High-Speed and High-Power Applications. J. Electron. Mater. 49, 524–529 (2020). https://doi.org/10.1007/s11664-019-07731-4

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