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Light Emission in Nd Doped Si-Rich HfO2 Films Prepared by Magnetron Sputtering

  • Topical Collection: 61st Electronic Materials Conference 2019
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Abstract

Hafnium oxide films doped with Si and Nd atoms were produced by radio-frequency magnetron sputtering of a HfO2 target topped with calibrated Si and Nd2O3 pellets in pure argon plasma followed by an annealing in nitrogen atmosphere during tA = 15 min at different temperatures (TA = 800–1100°C). The evolution of structural, chemical and luminescent properties of the films with TA was studied by means of the scanning electronic microscopy (SEM), x-ray diffraction (XRD), Raman scattering, energy dispersive x-ray spectroscopy and photoluminescence (PL) methods. The SEM method revealed that the surface of as-deposited film consists of the grains with the mean size of 20–60 nm. Annealing treatment stimulated the growing of the grains (up to 100 nm in lateral size) and film densification. The presence of Si-rich phase was detected by Raman scattering spectra in as-deposited films and those annealed at low TA. The TA increase results in the phase separation process. For the films annealed at TA > 950°C, the tetragonal HfO2 and SiO2 phases were clearly detected by the XRD method. PL spectra of the films were found to be complex. They demonstrated several PL bands in the visible (400–750 nm) and infrared (800–1430 nm) spectral ranges. Besides PL components caused by the recombination of carriers via host defects, the PL signal from Nd3+ ions due to the transition in the 4f inner electronic shell was observed. The highest Nd3+ related PL signal was observed for the films annealed at TA = 950°C. Peculiarities of PL excitation and the mechanism of the phase separation are analysed and discussed.

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Acknowledgments

This work was partly supported by National Academy of Sciences of Ukraine (Project III-4-16), Ministry of Education and Science (Project ID: 89452), the French National Agency of Research (ANR), as well as by the CONACYT Mexico (Project 258224) and SIP-IPN Mexico (Project 20195080).

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Authors and Affiliations

  1. Instituto Politécnico Nacional - ESFM, 07738, Mexico City, Mexico

    T. Torchynska

  2. Instituto Politécnico Nacional - ESIME, 07738, Mexico City, Mexico

    L. G. Vega Macotela

  3. V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kiev, 03028, Ukraine

    L. Khomenkova

  4. CIMAP, UMR CNRS/CEA/ENSICAEN/UNICAEN, 6 Boulevard Marechal Juin, 14050, Caen Cedex 4, France

    L. Khomenkova & F. Gourbilleau

  5. National University “Kyiv-Mohyla Academy”, Kiev, 04170, Ukraine

    L. Khomenkova

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  1. T. Torchynska
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  2. L. G. Vega Macotela
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  3. L. Khomenkova
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  4. F. Gourbilleau
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Correspondence to T. Torchynska.

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Torchynska, T., Vega Macotela, L.G., Khomenkova, L. et al. Light Emission in Nd Doped Si-Rich HfO2 Films Prepared by Magnetron Sputtering. J. Electron. Mater. 49, 3441–3449 (2020). https://doi.org/10.1007/s11664-019-07847-7

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  • DOI: https://doi.org/10.1007/s11664-019-07847-7

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