Issue 5, 2020

Partial sulfuration-induced defect and interface tailoring on bismuth oxide for promoting electrocatalytic CO2 reduction

Abstract

Defect and interface engineering is a powerful strategy to tune the electronic structure and adsorption behavior of electrocatalysts, boosting the performance of the electrocatalytic CO2 reduction reaction (eCO2RR). Herein, we construct a hybrid electrocatalyst, Bi2S3–Bi2O3@rGO, with a large amount of defects (oxygen vacancies etc.) and a specific interface between bismuth sulfide (Bi2S3) and bismuth oxide (Bi2O3) by a partial precipitation conversion method. Both experimental results and theoretical calculations reveal that the Bi2S3–Bi2O3 interface drastically lowers the formation energy of HCOO*, in favor of the production of formate (HCOOH) over CO, promoting the conversion of CO2 to HCOOH. The as-prepared electrocatalyst shows excellent electrocatalytic activity to generate HCOOH with a high faradaic efficiency of over 90% and a low overpotential of 700 mV, as well as excellent durability for more than 24 h.

Graphical abstract: Partial sulfuration-induced defect and interface tailoring on bismuth oxide for promoting electrocatalytic CO2 reduction

Supplementary files

Article information

Article type
Paper
Submitted
15 Oct 2019
Accepted
10 Dec 2019
First published
18 Dec 2019

J. Mater. Chem. A, 2020,8, 2472-2480

Partial sulfuration-induced defect and interface tailoring on bismuth oxide for promoting electrocatalytic CO2 reduction

X. Yang, P. Deng, D. Liu, S. Zhao, D. Li, H. Wu, Y. Ma, B. Y. Xia, M. Li, C. Xiao and S. Ding, J. Mater. Chem. A, 2020, 8, 2472 DOI: 10.1039/C9TA11363K

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