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Junction edge passivation study of silicon surface barrier detectors using organic films deposited by L–B technique

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Abstract

A new technique to passivate silicon surfaces using \(\hbox {SnO}_{2}\) films, produced by decomposing organic films of the octadecylamine–stannate complex, deposited by the Langmuir–Blodgett (L–B) technique, has been attempted to fabricate silicon surface barrier detectors. This method of passivation is relatively simpler and can be carried out at a much lower temperature as compared to the usual passivation method of the silicon surface by growing the \(\hbox {SiO}_{2}\) layer on it. Also, the passivating layer of \(\hbox {SnO}_{2}\) produced in this new method has a good shelf-life. The detectors fabricated with a passivating layer of \(\hbox {SnO}_{2}\) were subsequently tested for I–V, alpha spectrum and long-term performance.

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Acknowledgements

The authors are deeply thankful to Dr R Tewari of MSD, BARC for the valuable support in carrying out the SEM measurements. The authors also express their sincere thanks to M/s Allied Publishers Pvt. Ltd. (New Delhi, India) for granting copyright permission to reuse a figure from an article from the Proceedings of DAE Solid State Physics Symposium, vol 46, p 293 (2003) for comparison purposes.

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Authors and Affiliations

  1. Technical Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai, 400 085, India

    A Ray & T V Chandrasekhar Rao

  2. Homi Bhabha National Institute, Anushakti Nagar, Mumbai, 400 094, India

    A Ray, C A Betty & T V Chandrasekhar Rao

  3. Chemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai, 400 085, India

    Sipra Choudhury & C A Betty

  4. Material Science Division, Bhabha Atomic Research Centre, Trombay, Mumbai, 400 085, India

    Vishal Singh

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  1. A Ray
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  2. Sipra Choudhury
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  3. Vishal Singh
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  4. C A Betty
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  5. T V Chandrasekhar Rao
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Correspondence to A Ray.

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Ray, A., Choudhury, S., Singh, V. et al. Junction edge passivation study of silicon surface barrier detectors using organic films deposited by L–B technique. Bull Mater Sci 42, 277 (2019). https://doi.org/10.1007/s12034-019-1948-4

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  • DOI: https://doi.org/10.1007/s12034-019-1948-4

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