Abstract
Controlling ferromagnetic thickness (t) and properties such as saturation magnetization (Ms) and effective magnetic anisotropy constant (Keff) has been regarded as critical for the performance of magnetic tunnel junctions (MTJs) with interfacial perpendicular magnetic anisotropy. Here, we report the effects of hybridizing a CoFeB layer with a FeNiSiB layer as part of a magnetic free layer structure. We deposited thin film stacks by magnetron sputtering on Si wafers with thermal oxides and carried out post-deposition heat treatment at 300 °C for 1 h in a vacuum under a magnetic field. We found that Ms and Keff could be tuned by adding a layer of amorphous FeNiSiB. While the Ms and Keff values were modified, the tunneling magnetoresistance (TMR) ratios of the MTJs were maintained, even though the CoFeB thickness was decreased by half. Moreover, an asymmetric bias voltage dependence of TMR was suppressed in the MTJs with FeNiSiB/CoFeB hybrid free layers due to improvements in the interface quality between the CoFeB/MgO interfaces.
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Wang, L., Yang, C.H., Wen, J.: Physical principles and current status of emerging non-volatile solid state memories. Electron. Mater. Lett. 11(4), 505–543 (2015)
Chun, K.C., Zhao, H., Harms, J.D., Kim, T.H., Wang, J.P., Kim, C.H.: A scaling roadmap and performance evaluation of in-plane and perpendicular MTJ based STT-MRAMs for high-density cache memory. IEEE J. Solid-State Circuits 48(2), 598–610 (2012)
Khalili Amiri, P., Zeng, Z.M., Langer, J., Zhao, H., Rowlands, G., Chen, Y.J., Krivorotov, I.N., Wang, J.P., Jiang, H.W., Katine, J.A., Huai, Y.: Switching current reduction using perpendicular anisotropy in CoFeB–MgO magnetic tunnel junctions. Appl. Phys. Lett. 98(11), 112507 (2011)
Sato, H., Enobio, E.C.I., Yamanouchi, M., Ikeda, S., Fukami, S., Kanai, S., Matsukura, F., Ohno, H.: Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11 nm. Appl. Phys. Lett. 105(6), 062403 (2014)
Sokalski, V., Moneck, M.T., Yang, E., Zhu, J.G.: Optimization of Ta thickness for perpendicular magnetic tunnel junction applications in the MgO–FeCoB–Ta system. Appl. Phys. Lett. 101(7), 072411 (2012)
Peng, S., Wang, M., Yang, H., Zeng, L., Nan, J., Zhou, J., Zhang, Y., Hallal, A., Chshiev, M., Wang, K.L., Zhang, Q.: Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures. Sci. Rep. 5, 18173 (2015)
Miyakawa, N., Worledge, D.C., Kita, K.: Impact of Ta diffusion on the perpendicular magnetic anisotropy of Ta/CoFeB/MgO. IEEE Magn. Lett. 4, 1000104 (2013)
Peng, S., Kang, W., Wang, M., Cao, K., Zhao, X., Wang, L., Zhang, Y., Zhang, Y., Zhou, Y., Wang, K.L., Zhao, W.: Interfacial perpendicular magnetic anisotropy in sub-20 nm tunnel junctions for large-capacity spin-transfer torque magnetic random-access memory. IEEE Magn. Lett. 8, 3105805 (2017)
Useinov, A., Kosel, J.: Spin asymmetry calculations of the TMR-V curves in single and double-barrier magnetic tunnel junctions. IEEE Trans. Magn. 47(10), 2724–2727 (2011)
Useinov, A., Mryasov, O., Kosel, J.: Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior. J. Magn. Magn. Mater. 324(18), 2844–2848 (2012)
Kim, S., Baek, S.H.C., Ishibashi, M., Yamada, K., Taniguchi, T., Okuno, T., Kotani, Y., Nakamura, T., Kim, K.J., Moriyama, T., Park, B.G.: Contributions of Co and Fe orbitals to perpendicular magnetic anisotropy of MgO/CoFeB bilayers with Ta, W, IrMn, and Ti underlayers. Appl. Phys. Express 10(7), 073006 (2017)
Kim, D.K., Cho, J.U., Chun, B.S., Shin, K.H., Lee, K.J., Tsunoda, M., Takahashi, M., Kim, Y.K.: Magnetotransport properties of dual MgO barrier magnetic tunnel junctions consisting of CoFeB/FeNiSiB/CoFeB free layers. Appl. Phys. Lett. 101(23), 232401 (2012)
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This work was supported in part by the Future Materials Discovery Program through the National Research Foundation of Korea, funded by the Ministry of Science and ICT (Grant No. 2015M3D1A1070465), by the Samsung Electronics’ University R&D program.
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Kim, D.K., Lee, M., Joo, J. et al. Interfacial Perpendicular Magnetic Anisotropy in Magnetic Tunnel Junctions Comprising CoFeB with FeNiSiB Layers. Electron. Mater. Lett. 16, 35–40 (2020). https://doi.org/10.1007/s13391-019-00183-2
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DOI: https://doi.org/10.1007/s13391-019-00183-2