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Set transition statistics of different switching regimes of TaOx memristor

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Abstract

In this work, the statistics of Set transition parameters of two different resistance switching (RS) regimes of TaOx-based memristor have been analyzed. By screening the statistical data into six different resistance ranges, the distributions of Set voltage and Set current are shown to be compatible with a Weibull model. The scale factors of Set voltages increase with the OFF-State resistances whereas the scale factors of Set currents decrease with the OFF-State resistances, matching the experimental results. The Weibull slopes of Set voltages and Set currents are demonstrated to be independent of the OFF-State resistances. This is an indication that the Set point corresponds to the initial phase of the formation of conductive filaments. Besides, it has been revealed that the high endurance RS regime owes higher Weibull slopes. This work is greatly significant on the improvement of the uniformity and the endurance of memristor devices.

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References

  1. D.B. Strukov, G.S. Snider, D.R. Stewart, R.S. Williams, Nature 453(7191), 80–83 (2008)

    Article  Google Scholar 

  2. T. Prodromakis, C. Toumazou, L. Chua, Nat. Mater. 11(6), 478–481 (2012)

    Article  Google Scholar 

  3. R. Waser, R. Dittmann, G. Staikov, K. Szot, Adv. Mater. 21(25-26), 2632–2663 (2009)

    Article  Google Scholar 

  4. A. Wedig, M. Luebben, D.-Y. Cho, M. Moors, K. Skaja, V. Rana, T. Hasegawa, K.K. Adepalli, B. Yildiz, R. Waser, I. Valov, Nat. Nanotechnol. 11, 67–74 (2015)

    Article  Google Scholar 

  5. Z. Wang, H. Jiang, J.M. Hyung, P. Lin, A. Ribbe, Q. Xia, J.J. Yang, Nanoscale 8(29), 14023–14030 (2016)

    Article  Google Scholar 

  6. T. Chang, S.-H. Jo, W. Lu, ACS Nano 5(9), 7669–7676 (2011)

    Article  Google Scholar 

  7. M. Prezioso, F.M. Bayat, B.D. Hoskins, G.C. Adam, K.K. Likharev, D.B. Strukov, Nature 521(7550), 61–64 (2015)

    Article  Google Scholar 

  8. J.J. Yang, M.X. Zhang, J.P. Strachan, F. Miao, M.D. Pickett, R.D. Kelley, G.M. Ribeiro, R.S. Williams, Appl. Phys. Lett. 97(23), 232102 (2010)

    Article  Google Scholar 

  9. F. Miao, J.P. Strachan, J.J. Yang, M.X. Zhang, I. Goldfarb, A.C. Torrezan, P. Eschbach, R.D. Kelley, G. Medeiros-Ribeiro, R.S. Williams, Adv. Mater. 23(47), 5633–5640 (2011)

    Article  Google Scholar 

  10. X. Lian, M. Wang, M. Rao, P. Yan, J.J. Yang, F. Miao, Appl. Phys. Lett. 110(17), 173504 (2017)

    Article  Google Scholar 

  11. M.-J. Lee, C.B. Lee, D. Lee, S.R. Lee, M. Chang, J.H. Hur, Y.-B. Kim, C.-J. Kim, D.H. Seo, S. Seo, U.-I. Chung, I.-K. Yoo, K. Kim, Nat. Mater. 10(8), 625–630 (2011)

    Article  Google Scholar 

  12. J.P. Strachan, A.C. Torrezan, F. Miao, M.D. Pickett, J.J. Yang, W. Yi, G. Medeiros-Ribeiro, R.S. Williams, IEEE Trans. Electron Devices 60(7), 2194–2202 (2013)

    Article  Google Scholar 

  13. F. Miao, W. Yi, I. Goldfarb, J.J. Yang, M.X. Zhang, M.D. Pickett, J.P. Strachan, G. Medeiros-Ribeiro, R.S. Williams, ACS Nano 6(3), 2312–2318 (2012)

    Article  Google Scholar 

  14. M. Lübben, S. Wiefels, R. Waser, I. Valov, Adv. Electron. Mater. 4(1), 1700458 (2018)

    Article  Google Scholar 

  15. D.-Y. Cho, M. Luebben, S. Wiefels, K.-S. Lee, I. Valov, ACS Appl. Mater. Interfaces 9(22), 19287–19295 (2017)

    Article  Google Scholar 

  16. J.J. Yang, D. Strukov, D. Stewart, Nature Nanotech. 8(1), 13–24 (2013)

    Article  Google Scholar 

  17. A. Prakash, D. Deleruyelle, J. Song, M. Bocquet, H. Hwang, Appl. Phys. Lett. 106(23), 233104 (2015)

    Article  Google Scholar 

  18. S. Choi, S.H. Tan, Z. Li, Y. Kim, C. Choi, P.-Y. Chen, H. Yeon, S. Yu, J. Kim, Nat. Mater. (2018)

  19. H.-S.P. Wong, H.-Y. Lee, S. Yu, Y.-S. Chen, Y. Wu, P.-S. Chen, B. Lee, F.T. Chen, M.-J. Tsai, Proc. IEEE 100(6), 1951–1970 (2012)

    Article  Google Scholar 

  20. J.J. Yang, R.S. Williams, ACM J. Emerg. Technol. Comput. Syst. 9, 1–20 (2013)

    Google Scholar 

  21. S. Long, X. Lian, C. Cagli, L. Perniola, E. Miranda, D. Jiménez, H. Lv, Q. Liu, L. Li, Z. Huo, M. Liu, J. Suñé, Reliabil. Phys. Symp. 33, 5A.6.1–5A.6.8 (2013)

    Google Scholar 

  22. M. Zhang, S. Long, G. Wang, X. Xu, Y. Li, Q. Liu, H. Lv, X. Lian, E. Miranda, J. Suñé, M. Liu, Appl. Phys. Lett. 105(19), 193501 (2014)

    Article  Google Scholar 

  23. X. Lian, M. Wang, P. Yan, J.J. Yang, F. Miao, J. Electroceram., 1–5 (2017)

  24. S. Ambrogio, S. Balatti, A. Cubeta, A. Calderoni, N. Ramaswamy, D. Ielmini, IEEE Trans. Electron Devices 61(8), 2912–2919 (2014)

    Article  Google Scholar 

  25. K.M. Kim, J.J. Yang, E. Merced, C. Graves, S. Lam, N. Davila, M. Hu, N. Ge, Z. Li, R.S. Williams, C.S. Hwang, Adv. Elec. Mater. 1(6), 1500095 (2015)

    Article  Google Scholar 

  26. Y. Ji, C. Pan, M. Zhang, S. Long, X. Lian, F. Miao, F. Hui, Y. Shi, L. Larcher, E. Wu, M. Lanza, Appl. Phys. Lett. 108, 73103 (2016)

    Article  Google Scholar 

  27. S. Long, X. Lian, C. Cagli, L. Perniola, E. Miranda, M. Liu, J. Suñé, IEEE Electron Device Lett. 34(8), 999–1001 (2013)

    Article  Google Scholar 

  28. J. Lee, C. Du, K. Sun, E. Kioupakis, W. Lu, ACS Nano 10(3), 3571–3579 (2016)

    Article  Google Scholar 

Download references

Acknowledgements

This work was supported in part by the National Natural Science Foundation of China (No. 61804079, No. 61704084), the Science Research Funds for Nanjing University of Posts and Telecommunications (NY218110, NY217116).

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Authors and Affiliations

  1. The Department of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China

    Xiaojuan Lian, Xiang Wan, Yu-Feng Guo & Yi Tong

  2. National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China

    Xiaojuan Lian & Feng Miao

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  1. Xiaojuan Lian
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  2. Feng Miao
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  3. Xiang Wan
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Correspondence to Xiaojuan Lian or Yi Tong.

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Lian, X., Miao, F., Wan, X. et al. Set transition statistics of different switching regimes of TaOx memristor. J Electroceram 42, 118–123 (2019). https://doi.org/10.1007/s10832-019-00176-5

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