Issue 16, 2024

In situ P-doping induced Se vacancies enhance the supercapacitor performance of NiCo2Se4

Abstract

Transition metal selenide is a typical pseudocapacitive material used in supercapacitor electrodes, but its practical application is restricted due to its insufficient utilization rate of active sites and slow kinetics of redox reaction. Defect engineering can effectively adjust the electronic structure, provide additional intercalation sites, and realize the regulation of energy storage mechanism within the lattice. At present, heteroatom doping is an effective strategy that can provide abundant vacancy defects by introducing heterogeneous atoms, thereby achieving significantly improved electrochemical performance. Based on this, NiCo2Se4 electrode materials with Se vacancies were prepared by P doping for supercapacitors. The double-effect synergy of P doping and vacancy engineering can effectively change the electronic structure and improve the adsorption capacity of ions, which are more prone to redox reactions. The assembled hybrid supercapacitor (NiCo2Sex-P1//AC) has 90.2% capacity retention and 100% coulombic efficiency after 10 000 consecutive charge–discharge cycles, and it exhibits a high energy density of 94.6 W h kg−1 at a power density of 799.9 W kg−1. This provides an effective strategy for constructing high-performance supercapacitors.

Graphical abstract: In situ P-doping induced Se vacancies enhance the supercapacitor performance of NiCo2Se4

Supplementary files

Article information

Article type
Paper
Submitted
17 Jan 2024
Accepted
23 Mar 2024
First published
05 Apr 2024

CrystEngComm, 2024,26, 2197-2206

In situ P-doping induced Se vacancies enhance the supercapacitor performance of NiCo2Se4

M. Wang, W. Liu, L. Zhang, H. Liu and X. Yang, CrystEngComm, 2024, 26, 2197 DOI: 10.1039/D4CE00048J

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