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Phase-change memories

Memory augmented factorization for holographic representation

Nature Nanotechnology volume 18, pages 442–443 (2023)Cite this article

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An in-memory factorization device, based on a phase-change material, shows enhanced capabilities in solving large-scale factorization problems due to improved energy, area and time efficiencies of the memory function.

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Fig. 1: In-memory factorization system for holographic representation based on PCM.

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Authors and Affiliations

  1. School of Integrated Circuits, Institute for Artificial Intelligence, Peking University, Beijing, China

    Yingming Lu & Yuchao Yang

  2. School of Electronic and Computer Engineering, Peking University, Shenzhen, China

    Yuchao Yang

  3. Chinese Institute for Brain Research (CIBR), Beijing, Beijing, China

    Yuchao Yang

Authors
  1. Yingming Lu
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  2. Yuchao Yang
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Correspondence to Yuchao Yang.

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The authors declare no competing interests.

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Lu, Y., Yang, Y. Memory augmented factorization for holographic representation. Nat. Nanotechnol. 18, 442–443 (2023). https://doi.org/10.1038/s41565-023-01351-0

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