Elsevier

Acta Materialia

Volume 250, 15 May 2023, 118871
Acta Materialia

Full length article
Domain wall motion across microstructural features in polycrystalline ferroelectric films

https://doi.org/10.1016/j.actamat.2023.118871Get rights and content

Abstract

This paper describes the effect of microstructural features such as grain boundaries and triple points on the pinning of domain wall motion in perovskite Pb(Zr0.52Ti0.48)O3 (PZT) films on polycrystalline SrRuO3/SrTiO3 substrates. Spatial variability in the collective domain wall dynamics was assessed using non-linearity mapping via Band Excitation Piezoresponse Force Microscopy (BE-PFM). Collocating the non-linearity maps with triple point locations (as visualized by EBSD) allowed for exploration of the effects that local microstructure (e.g., grain boundary) have on domain wall motion. It was found that the extrinsic behavior varied with both the misorientation angle and the proximity to the grain boundary. The width of influence of individual grain boundaries on the motion of domain walls was a function of the character of the grain boundary; random grain boundaries exhibit deeper minima in αd/d33,initial and larger widths of influence  (up to 905 nm) compared to coincident site lattice (CSL) boundaries (up to 572 nm). Additionally, triple points containing larger numbers of random boundaries exhibited non-Rayleigh behavior to greater distances, suggesting that the triple point provides either a deep potential minimum or a region where domain wall motion is unfavorable.

Introduction

The piezoelectric response of ferroelectric materials can be divided into intrinsic and extrinsic sources, where the intrinsic response corresponds to the appropriate average of the single domain single crystal response; extrinsic contributions are those due to motion of mobile interfaces such as phase boundaries or domain walls [1], [2], [3], [4], [5]. The macroscopic properties of polycrystalline perovskites are the ensemble average of many grains and even more domain walls. Calculating the response of ceramics, however, is challenging due to the grain-to-grain coupling, the interactions between the intrinsic and extrinsic contributions, the inherent anisotropy of the piezoelectric response, and incomplete knowledge about how local elastic and electric fields influence domain wall motion. It is thus interesting to explore somewhat simplified systems where the effect of single factors on extrinsic contributions can be quantified.  This paper focuses on the characteristics of individual grain boundaries and triple points on the extrinsic piezoelectric response in lead zirconate titanate (PZT) films, as a model system.

Extrinsic contributions have been reported to decrease near grain boundaries in ferroelectric films and ceramics. Randall et al. demonstrated that the piezoelectric properties of PZT ceramics decreased with decreasing grain size, which was attributed to a change in the domain structure and a reduction in domain wall contributions [6]. Similarly, Griggio et al. reported that an average grain size increase from 110 nm to 270 nm in PZT-based films was accompanied by a doubling of the irreversible dielectric Rayleigh coefficient αd from 5.3 ± 0.1 cm/kV to 10.6 ± 0.1 cm/kV [7]. αd is associated with the irreversible motion of domain walls. Grain boundaries have also been reported to influence the ferroelectric switching characteristics [8], [9], [10], [11].

Marincel et al. measured the local impact of single grain boundaries on the irreversible to the reversible Rayleigh coefficient ratios using band excitation piezoresponse force microscopy (BE-PFM). Both reversible d33,initial and irreversible, αd, Rayleigh coefficients were calculated from the nonlinear dependence of out-of-plane deflection on increasing applied AC voltage. The ratio of αd/d33,initial suggested increased pinning of domain wall motion within 476 nm of a 24 tilt grain boundary in a PbZr0.52Ti0.48O3 (PZT 52/48) film on a bicrystal substrate [12]. The width of  influence of the reduced response at grain boundaries was found to be dependent on both the misorientation angle and the tilt/twist characteristics of the boundary [13].

Among the factors thought to affect the width of influence of a particular grain boundary is the connectivity of the domain structure across the structural discontinuity. Following seminal work by Tsurekawa [14], Mantri reported that for random grain-grain misorientations, domain continuity is dependent on the ability of the material to compensate strain mismatch and minimize the polarization charge at the grain boundary [15]. It was found that a larger uncompensated charge and/or bigger spontaneous polarizations make continuity less energetically favorable.

Fousek et al. studied permissible orientations of ferroelectric domain walls in detail. He noted that uniform strain states should in theory only yield domain walls along planes of mechanical compatibility in the absence of external stress [16]. When no additional elastic strain develops, the domain wall  is deemed a “permissible wall” [16]. If two non-permissible domains meet along a stressed boundary, domain switching is expected to be restricted, as has been noted in grain boundary pinning [16,17]. The domain structure is thus a developing system that acts in response to strain and charge from differently oriented polarizations.

To date, quantitative evaluations of the role of individual grain boundaries on the motion of domain walls are limited, with most of the data pertaining to symmetrical grain boundaries. A more comprehensive set of data is required to better understand the role that grain boundaries exert in pinning extrinsic contributions to the properties. It is speculated that grain boundaries with a shared axis rotation, i.e., Coincident Site Lattice (CSL) boundaries, may facilitate domain wall motion across the grain boundary relative to random grain boundaries. Thus, in this work, the intrinsic and extrinsic contributions to the piezoelectric response were assessed for PZT films deposited onto polycrystalline large-grained SrRuO3/SrTiO3 substrates. The substrates allowed many grain boundary orientations to be isolated by Electron Backscatter Diffraction (EBSD) and categorized based on grain boundary angle and shared orientation axes. BE-PFM imaging was used to quantify the local piezoelectric nonlinearities.

Section snippets

Experimental procedure

Strontium titanate (SrTiO3) ceramic substrates, obtained from Knowles Precision Devices, were cleaned, mechanically polished, and annealed prior to depositing the strontium ruthenate (SrRuO3) bottom electrodes. The final substrate polishing parameters and anneal conditions are given in Supplemental Materials. Epitaxial SrRuO3 bottom electrodes were deposited on the SrTiO3 substrates by pulsed laser deposition (PLD) following the conditions listed in Table S1 in Supplemental Materials. The

Results & discussion

A method adopted from Marincel et al. (Method 3), which utilize clustered response behavior, were implemented to analyze the width of influence of individual grain boundaries on the motion of domain walls [12]. In particular, the average nonlinear response was calculated parallel to the grain boundary in 50 nm (BE-PFM pixel size) increments away from the boundary as the distance from grain boundary. The average and standard deviation of the nonlinear response in each grain was then determined

Conclusions

The influence of assorted grain boundaries and triple points on the motion of domain walls was studied in PbZr0.52Ti0.48O3 films. It was found that the character of the grain boundary affected the way in which domain walls moved. In particular, coincident site lattice grain boundaries exhibited shallower minima in αd/d33,initial than was observed for random grain boundaries. It is speculated that regularity in the crystalline arrangement of the two grains may facilitate collective domain wall

Notice of copyright

This Manuscript has been authored by UT-Battelle, LLC, under contract DE-AC05–00OR22725 with the US Department of Energy (DOE). The US government retains and the publisher, by accepting the article for publication, acknowledges that the US government retains a nonexclusive, paid-up, irrevocable, worldwide license to publish or reproduce the published form of this manuscript, or allow others to do so, for US government purposes. DOE will provide public access to these results of federally

Declaration of Competing Interest

The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

Acknowledgements

This work was supported by The National Science Foundation [grant number NSF DMR-2025439]. PFM research was supported by the Center for Nanophase Materials Sciences (CNMS), which is a US Department of Energy, Office of Science User Facility at Oak Ridge National Laboratory. SrTiO3 substrates were provided by Dr. Sridar Venigalla.

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