A monocrystalline native oxide dielectric, β-Bi2SeO5, with a high dielectric constant has been synthesized by oxidizing a two-dimensional (2D) semiconductor, Bi2O2Se. In 2D transistors, the ultrathin β-Bi2SeO5 dielectric demonstrates sub-0.5-nm equivalent oxide thickness and leakage current below the low-power limit, meeting the requirements of the International Roadmap for Devices and Systems.
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References
International Roadmap for Devices and Systems (IEEE, 2021). An IEEE roadmap for the development of integrated circuits, which specifies the requirements of each part of the system.
Das, S. et al. Transistors based on two-dimensional materials for future integrated circuits. Nat. Electron. 4, 786–799 (2021). A review article that presents the requirements of 2D transistors.
Illarionov, Y. Y. et al. Insulators for 2D nanoelectronics: the gap to bridge. Nat. Commun. 11, 3385 (2020). A review article that presents the insulators used in 2D semiconductors and the methods of quality evaluation.
Robertson, J. & Wallace, R. M. High-K materials and metal gates for CMOS applications. Mater. Sci. Eng. R Rep. 88, 1–41 (2015). A review article that presents the basic understanding and requirements of dielectrics in integrated circuits.
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This is a summary of: Zhang, Y. et al. A single-crystalline native dielectric for two-dimensional semiconductors with an equivalent oxide thickness below 0.5 nm. Nat. Electron. https://doi.org/10.1038/s41928-022-00824-9 (2022).
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Producing ultrathin monocrystalline native oxide dielectrics for 2D transistors. Nat Electron 5, 633–634 (2022). https://doi.org/10.1038/s41928-022-00835-6
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DOI: https://doi.org/10.1038/s41928-022-00835-6
