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Active Integral High Pass Filters

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Abstract

The structures of devices based on both an insulated-gate field-effect transistor and a bipolar transistor are proposed and theoretically investigated. The main design feature of the devices is that the drain and collector electrodes are made in the form of MOS capacitors. The manufacturing of devices does not require changes in the standard technological routes. Distributed equivalent circuits of devices are constructed, taking into account their design and technological features. SPICE-models of devices are developed and the parameters of these models are identified on numerical examples. The considered devices are elementary high-pass filters and have wide-ranging prospects for application in analog electronics.

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Authors and Affiliations

  1. Institute of Applied Mathematics and Automation, Kabardino-Balkarian Scientific Center, Russian Academy of Sciences, 360000, Nalchik, Kabardino-Balkarian Republic, Russia

    S. Sh. Rekhviashvili

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  1. S. Sh. Rekhviashvili
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Correspondence to S. Sh. Rekhviashvili.

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Rekhviashvili, S.S. Active Integral High Pass Filters. Russ Microelectron 51, 311–317 (2022). https://doi.org/10.1134/S1063739722050079

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  • DOI: https://doi.org/10.1134/S1063739722050079

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