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Electrostatic gating and intercalation in 2D materials

Nature Reviews Materials volume 8, pages 41–53 (2023)Cite this article

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Abstract

The doping or the alteration of crystals with guest species to obtain desired properties has long been a research frontier in materials science. However, the closely packed lattice structure in many crystals has limited the applicability of this strategy. The advent of 2D layered materials has led to revitalized interest in utilizing this approach through two important strategies, gating and intercalation, offering reversible modulation of the properties of the host material without breaking chemical bonds. In addition, these dynamically tunable techniques have enabled the synthesis of new hybrid materials. Here, we review how interactions between guest species and host 2D materials can tune the physics and chemistry of materials and discuss their remarkable potential for creating artificial materials and architectures beyond the reach of conventional methods.

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Fig. 1: Interactions between 2D materials and guest species.
Fig. 2: Guest-species gating method.
Fig. 3: Gate-controlled modulation and phase diagrams in 2D materials.
Fig. 4: Effects and progress of (de-)intercalation.

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Acknowledgements

The authors acknowledge support from the US Department of Energy (DOE), Office of Basic Energy Sciences, Division of Materials Sciences and Engineering (Contract No. DE-AC02-76SF00515).

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  1. These authors contributed equally: Yecun Wu, Danfeng Li, Chun-Lan Wu.

Authors and Affiliations

  1. Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA

    Yecun Wu, Danfeng Li, Harold Y. Hwang & Yi Cui

  2. Department of Electrical Engineering, Stanford University, Stanford, CA, USA

    Yecun Wu

  3. Department of Applied Physics, Stanford University, Stanford, CA, USA

    Danfeng Li & Harold Y. Hwang

  4. Department of Physics, City University of Hong Kong, Kowloon, Hong Kong SAR

    Danfeng Li

  5. Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA

    Chun-Lan Wu & Yi Cui

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Contributions

Researching data for article: Y.W., D.L. and C.-L.W. Review/editing of manuscript before submission: Y.W., D.L., H.Y.H. and Y.C. Substantial contribution to discussion of content: Y.W., D.L., C.-L.W., H.Y.H. and Y.C. Writing: Y.W., D.L., C.-L.W., H.Y.H. and Y.C.

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Wu, Y., Li, D., Wu, CL. et al. Electrostatic gating and intercalation in 2D materials. Nat Rev Mater 8, 41–53 (2023). https://doi.org/10.1038/s41578-022-00473-6

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